Abstract Accurate determination of microphone sensitivity is important to build reliable acoustical instruments. The sensitivity is usually determined by calibration. However, because available microphone calibration methods determine the sensitivity from a mathematical model derived from the geometry of a conventional condenser microphone, they cannot be applied to the calibration of microelectromechanical systems (MEMS) microphone straightforwardly. To compromise this geometry difference with the available calibration methods, some authors have proposed the development of adapters that fits the conventional calibration apparatus and modified the calibration procedure. In this paper, we propose a different approach to calibrate the MEMS microphone. The sensitivity is calculated directly from the measurement of the sound field applied to the MEMS microphone and its output voltage. The projection of the sound field is measured by parallel phase-shifting interferometry (PPSI), and sound pressure on the MEMS microphone is obtained by tomographic reconstruction. Experimental calibration of a MEMS microphone was performed and validated using a microphone substitution method to evaluate the discrepancies of the sensitivity result. It is shown that the proposed method can be used to determine the frequency response of the MEMS microphone in the frequency range of 1000 Hz to 12000 Hz.

中文翻译：

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使用光学相移干涉测量法通过声场测量确定 MEMS 麦克风的频率响应

摘要 准确确定麦克风灵敏度对于构建可靠的声学仪器非常重要。灵敏度通常由校准确定。然而，由于可用的麦克风校准方法根据从传统电容式麦克风的几何结构导出的数学模型确定灵敏度，因此它们不能直接应用于微机电系统 (MEMS) 麦克风的校准。为了用可用的校准方法来折衷这种几何差异，一些作者建议开发适合传统校准设备的适配器并修改校准程序。在本文中，我们提出了一种不同的方法来校准 MEMS 麦克风。灵敏度是通过测量施加到 MEMS 麦克风的声场及其输出电压直接计算得出的。声场的投影通过平行相移干涉仪（PPSI）测量，MEMS麦克风上的声压通过断层扫描重建获得。使用麦克风替代方法对 MEMS 麦克风进行实验校准并进行验证，以评估灵敏度结果的差异。结果表明，所提出的方法可用于确定 MEMS 麦克风在 1000 Hz 至 12000 Hz 频率范围内的频率响应。使用麦克风替代方法对 MEMS 麦克风进行实验校准并进行验证，以评估灵敏度结果的差异。结果表明，所提出的方法可用于确定 MEMS 麦克风在 1000 Hz 至 12000 Hz 频率范围内的频率响应。使用麦克风替代方法对 MEMS 麦克风进行实验校准并进行验证，以评估灵敏度结果的差异。结果表明，所提出的方法可用于确定 MEMS 麦克风在 1000 Hz 至 12000 Hz 频率范围内的频率响应。