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Quantitative calibration of conductive pattern growth via electroless copper plating at nano-resolution
Surface Topography: Metrology and Properties ( IF 2.7 ) Pub Date : 2020-07-12 , DOI: 10.1088/2051-672x/aba342
Yanqiu Chen 1, 2 , Yu Liu 1, 2 , Wei Xu 1 , Yang Zhang 3 , Heng-Yong Nie 4, 5
Affiliation  

In compositions of flexible electronics, conductive strands with high flexibility are crucial. Today, electroless plating for metallization of plastic substrates is favourable, due to its low cost, broad material compatibility, high conductivity, and potential for batch process. It is important to investigate the surface chemistry during electroless plating for better quantization of conductive patterns during the growth with nanoscopic resolution. Wherein, time-of-flight secondary ion mass spectrometry (TOF-SIMS) and atomic force microscopy (AFM) are combinatively used to follow surface chemistry of electroless-plated copper layers on a silver-activated polyimide film, in a bath containing mainly a copper source, two chelates and a reducing agent of formaldehyde. TOF-SIMS results show that surface contaminants detected on the copper layers can be traced back to the chemicals used in the plating bath, some of which impact copper purity. Shallow depth profiling of a copper layer ...

中文翻译:

通过纳米级化学镀铜对导电图案生长的定量校准

在柔性电子器件的组成中,具有高柔性的导电线至关重要。如今,用于塑料基板金属化的化学镀由于其低成本,广泛的材料相容性,高导电性和批量处理的潜力而受到青睐。重要的是要研究化学镀过程中的表面化学,以便以纳米分辨率更好地量化生长过程中的导电图案。其中,飞行时间二次离子质谱(TOF-SIMS)和原子力显微镜(AFM)结合使用,主要用于在银活化的聚酰亚胺膜中的镀液,以跟踪银活化的聚酰亚胺膜上化学镀铜层的表面化学性质。铜源,两种螯合物和甲醛还原剂。TOF-SIMS结果表明,在铜层上检测到的表面污染物可以追溯到电镀液中使用的化学物质,其中一些会影响铜的纯度。铜层的浅深度剖析...
更新日期:2020-07-13
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