In this work, tungsten oxide thin films are deposited on silicon substrates using the hot filament chemical vapor deposition system. The influence of substrate temperature on the structural, morphological, and elemental composition of the tungsten oxide thin films is investigated using X-ray diffraction, field-emission scanning electron microscopy, and X-ray photoelectron spectroscopy techniques. Also, the mechanical and tribological properties of these thin films are considered using nanoindentation and scratch tests. Based on X-ray diffraction results, it can be concluded that tungsten oxide thin films are synthesized with a cubic WO3 structure. From field-emission scanning electron microscopy images, it can be seen that tungsten oxide thin films are made of crystal clusters which have grown vertically on the substrate surface. In addition, the results exhibit two asymmetric W4d5/2 and W4d7/2 peaks which can be assigned to W5+ and W4+ species, respectively. The mechanical results show that the hardness and the elastic modulus increase on raising the substrate temperature up to 600 °C. From the tribological performances, the friction coefficient of the tungsten oxide thin film decreases on increasing the substrate temperature.

中文翻译：

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硅衬底上氧化钨薄膜的结构和摩擦学特性

在这项工作中，使用热丝化学气相沉积系统在硅衬底上沉积氧化钨薄膜。使用 X 射线衍射、场发射扫描电子显微镜和 X 射线光电子能谱技术研究了衬底温度对氧化钨薄膜的结构、形态和元素组成的影响。此外，使用纳米压痕和划痕测试考虑了这些薄膜的机械和摩擦学特性。基于 X 射线衍射结果，可以得出结论，氧化钨薄膜是由立方 WO3 结构合成的。从场发射扫描电镜图像可以看出，氧化钨薄膜是由垂直生长在基板表面的晶簇构成的。此外，结果显示出两个不对称的 W4d5/2 和 W4d7/2 峰，它们分别属于 W5+ 和 W4+ 物种。力学结果表明，硬度和弹性模量随着基板温度升高至 600 °C 而增加。从摩擦学性能来看，氧化钨薄膜的摩擦系数随着衬底温度的升高而降低。