Single crystals of SnSe are grown by direct vapor transport technique. The elemental composition of as-grown crystals determined by dispersive X-ray energy analysis showed the crystals to be slightly selenium rich and tin deficient. The X-ray powder diffraction showed the crystal to possess orthorhombic unit cell structure. The lattice parameters are in good match with reported data. The surface micro-topography showed flat surfaces with layer edges, stating crystal growth to happen by mechanism of layer growth. The thermo-curves of the as-grown single crystals are recorded in temperature range of 308 K and 1053 K in inert nitrogen atmosphere. The curves are recorded for three thermal heating rates of 10, 15 and 20 K/min. The recorded thermogravimetric curves showed single-step decomposition. The single peak in differential thermogravimetric analysis further confirmed single-step decomposition. The differential thermal analysis of the samples showed initial exothermic followed by endothermic and at last exothermic nature. The thermodynamic variables determined from the thermo-curves data employing Kissinger relation stated absorption of heat leading to non-spontaneous decomposition.

中文翻译：

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SnSe单晶的热分解研究

SnSe的单晶通过直接蒸气传输技术生长。通过色散X射线能量分析确定的生长晶体的元素组成表明，该晶体富含硒，且锡缺乏。X射线粉末衍射显示该晶体具有正交晶胞结构。晶格参数与报告的数据非常匹配。表面微观形貌显示具有层边缘的平坦表面，表明晶体生长是通过层生长的机理发生的。在惰性氮气气氛中，在308 K和1053 K的温度范围内记录生长态单晶的热曲线。记录了10、15和20 K / min三种加热速率的曲线。记录的热重曲线显示单步分解。差示热重分析中的单个峰进一步证实了一步分解。样品的差示热分析显示了最初的放热，随后的吸热和最后的放热性质。根据基辛格关系从热曲线数据确定的热力学变量表示吸收了热量，导致非自发分解。