Tin sulfide (SnS) thin films were obtained by chemical bath deposition (CBD) using different concentrations of trisodium citrate (TSC) as a complexing agent. Nickel doping tin sulfide was carried out. The structural, electrical, chemical composition and optical properties of thin films were analyzed. The lowest resistivity (ρ = 0.42 × 10⁵Ω cm) is observed for Ni:SnS (6 at. %) The energy band gap values with the TSC addition are found in the range 1.36 eV–1.57 eV. The results demonstrated that tin sulfide (SnS) thin films have the potential to be used for optoelectronic applications.

中文翻译：

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TSC和镍掺杂对SnS薄膜的影响

通过使用不同浓度的柠檬酸三钠（TSC）作为络合剂的化学浴沉积（CBD）获得硫化锡（SnS）薄膜。进行了镍掺杂的硫化锡。分析了薄膜的结构，电学，化学组成和光学性质。最低电阻率（ρ  = 0.42×10 ⁵ Ω厘米）可以观察到的Ni：的SnS（6 在。％）与TSC添加的能带隙值的范围在1.36 EV-1.57 eV的被发现。结果表明，硫化锡（SnS）薄膜具有用于光电应用的潜力。