1T phase of transition metal dichalcogenides (TMDCs) formed by group 10 transition metals (e.g. Pt, Pd) have attracted increasing interests due to their novel properties and potential device applications. Synthesis of large scale thin films with controlled phase is critical especially considering that these materials have relatively strong interlayer interaction and are difficult to exfoliate. Here we report the growth of centimeter-scale PtTe, 1T-PtTe₂ and 1T-PtSe₂ films via direct deposition of Pt metals followed by tellurization or selenization. We find that by controlling the Te flux, a hitherto-unexplored PtTe phase can also be obtained, which can be further tuned into PtTe₂ by high temperature annealing under Te flux. These films with different thickness can be grown on a wide range of substrates, including NaCl which can be further dissolved to obtain free-standing PtTe₂ or PtSe₂ films. Moreover, a systematic thickness dependent resistivity and Hall conductivity measurements show that distinguished from the semiconducting PtSe₂ with hole carriers, PtTe₂ and PtTe films are metallic. Our work opens new opportunities for investigating the physical properties and potential applications of group 10 TMDC films and the new monochalcogenide PtTe film.

由第10族过渡金属（例如Pt，Pd）形成的过渡金属二硫化碳（TMDC）的1T相因其新颖的性质和潜在的器件应用而引起了越来越多的关注。具有受控相的大规模薄膜的合成是至关重要的，特别是考虑到这些材料具有相对强的层间相互作用并且难以剥离。在这里，我们报告了通过直接沉积Pt金属，然后进行碲化或硒化，厘米级PtTe，1T-PtTe ₂和1T-PtSe ₂薄膜的生长。我们发现，通过控制Te通量，还可以获得迄今未开发的PtTe相，可以将其进一步调谐到PtTe _2中。在Te助熔剂下进行高温退火。这些具有不同厚度的薄膜可以在包括NaCl在内的各种基材上生长，可以进一步溶解以获得自立式PtTe ₂或PtSe ₂薄膜。此外，系统的取决于厚度的电阻率和霍尔电导率测量结果表明，与带有空穴载流子的半导体PtSe _2不同，PtTe ₂和PtTe薄膜是金属的。我们的工作为研究第10组TMDC膜和新的硫属元素化物PtTe膜的物理性质和潜在应用提供了新的机会。