Abstract Si core fibers were annealed at 1200 °C, the annealing was carried out for 20 min, 30 min, 40 min, 50 min and 60 min, respectively by muffle furnace. The effects of different annealing time on residual stress distribution, crystalline state and the propagation losses of Si core; and the effect of cladding on the residual stresses in Si core were mainly investigated. Annealing could decrease the residual stresses and make the distribution of residual stresses uniform effectively. The SiO2 cladding introduces residual stresses into the core. Residual stress distribution of Si core became more uniform after removing the cladding. The Si core annealed for 50 min has smaller residual stresses, relatively uniform residual stress distribution and the lowest propagation loss in all samples. The propagation losses were measured using a quantum cascade laser with the wavelength range from 4.7 μm to 4.9 μm. The lowest propagation loss of 1.62 dB/cm has been achieved in all samples.

中文翻译：

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不同退火时间硅芯光纤的高温退火

摘要 硅芯光纤在1200 ℃下退火，分别采用马弗炉退火20 min、30 min、40 min、50 min和60 min。不同退火时间对硅芯残余应力分布、晶态及传播损耗的影响；主要研究了包层对硅芯残余应力的影响。退火可以有效降低残余应力，使残余应力分布均匀。SiO2 包层将残余应力引入芯中。去除包层后，硅芯的残余应力分布变得更加均匀。退火 50 分钟的硅芯具有较小的残余应力、相对均匀的残余应力分布和所有样品中最低的传播损耗。使用波长范围为 4.7 μm 至 4.9 μm 的量子级联激光器测量传播损耗。在所有样品中都实现了 1.62 dB/cm 的最低传播损耗。