Abstract Valley polarized transport was studied in graphene cross junctions consisting of a bilayer graphene device region connected to 4 monolayer graphene leads. Electrons injected from the armchair leads to the zigzag leads can be valley polarized in a range of Fermi energies. The valley polarization is produced by quantum interference and the Fano resonance effect in the device region. We also studied the dependence of the valley polarization on the dimensions of the junction and a vertical electric field applied to the device region. The valley polarization depends sensitively on the electric field, which enables us to control the valley polarization electrically.

中文翻译：

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石墨烯交叉结中的谷极化传输

摘要 在由连接到 4 个单层石墨烯引线的双层石墨烯器件区域组成的石墨烯交叉结中研究了谷极化传输。从扶手椅引线注入之字形引线的电子可以在费米能量范围内进行谷极化。谷极化是由器件区域中的量子干涉和法诺共振效应产生的。我们还研究了谷极化对结尺寸和施加到器件区域的垂直电场的依赖性。谷极化敏感地取决于电场，这使我们能够以电方式控制谷极化。