当前位置: X-MOL 学术ECS J. Solid State Sci. Technol. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Communication—Wide Bandgap Tin Oxide Thin Film Transistor by Doping Rare Earth Element Europium
ECS Journal of Solid State Science and Technology ( IF 2.2 ) Pub Date : 2020-07-09 , DOI: 10.1149/2162-8777/aba330
Jianwen Yang , Gengtao Hu , Duo Cao , Feng Liu

–Amorphous europium-doped tin oxide ( a- SnEuO) thin film transistors (TFTs) with a wide bandgap of 3.87 eV were prepared by sol-gel method. The results indicate that as Eu content increases, the off-state current of the a- SnEuO TFTs decreases, the threshold voltage (V th ) shifts in the positive direction and the subthreshold swing ( S.S. ) is also improved. When Eu content is 30 at%, the mobility of a- SnEuO TFTs is 4.5 cm 2 V −1 s −1 , with an S.S. of 0.8 V dec −1 . and a switching ratio of 9.5 × 10 6 . Our study indicates Eu-doped SnO 2 TFT is expected to be the next generation of display technology.

中文翻译:

通信—掺杂稀土元素Euro的宽带隙氧化锡薄膜晶体管

–通过溶胶-凝胶法制备了带隙为3.87 eV的非晶euro掺杂氧化锡(a-SnEuO)薄膜晶体管(TFT)。结果表明,随着Eu含量的增加,a-SnEuO TFT的截止态电流减小,阈值电压(V th)向正方向移动,并且亚阈值摆幅(SS)也得到改善。当Eu含量为30at%时,a-SnEuO TFT的迁移率为4.5cm 2 V -1 s -1,SS为0.8V dec -1。开关比为9.5×10 6。我们的研究表明,掺Eu的SnO 2 TFT有望成为下一代显示技术。
更新日期:2020-07-10
down
wechat
bug