Extremely flat, two-bilayer-high Bi(110) film was grown on a Si(111)√3 × √3-B substrate by two-step growth. Round amorphous islands nucleated during the initial deposition of Bi atoms at 90 K. The islands became larger and transformed into atomically flat, two-bilayer-high Bi(110) islands at a critical size (40 nm 2 ) in subsequent annealing. The Bi(110) islands extended laterally, and the substrate was finally covered by an extremely flat, two-bilayer-high Bi(110) film at room temperature. Surface X-ray diffraction revealed that the Bi film had a black phosphorous structure.

中文翻译：

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在Si（111）√3×√3-B衬底上生长非常平坦的Bi（110）膜

通过两步生长，在Si（111）√3×√3-B衬底上生长极其平坦的两层高Bi（110）薄膜。在90 K下Bi原子的初始沉积过程中，成核的圆形非晶岛成核。这些岛变大，并在随后的退火过程中转变成原子平坦的，双层高Bi（110）岛，其临界尺寸为（40 nm 2）。Bi（110）岛横向延伸，最后在室温下用一块非常平坦的两层高Bi（110）薄膜覆盖了基板。表面X射线衍射表明Bi膜具有黑色磷结构。