The excellent area efficiency of dual-directional SCRs (DDSCRs) have made them desirable for low-voltage and high-voltage applications. However, to implement the required symmetrical structure, conventional DDSCRs have to lengthen their ESD discharge path. In addition, the low holding voltage of existing DDSCRs is not suitable for high-voltage applications. In this study, a novel DDSCR with a high holding voltage and low dynamic resistance is proposed and its electrical characteristics are verified. The proposed DDSCR has two additional internal parasitic bipolar transistors compared to a conventional low- triggering voltage DDSCR (LTDDSCR). Self-gate biasing reduces latch-mode feedback between the parasitic bipolar transistors in the SCR. The device is fabricated using 0.13 $\mu {\mathrm{ m}}$ BCD processes and implements a segment layout resulting in a very low dynamic resistance of $2.2~{\Omega }$ and excellent holding voltages of up to 17.2 V. The proposed DDSCR demonstrates improved reliability and area efficiency for 12 V applications.

中文翻译：

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一种用于 12 V 应用的具有高保持电压的新型低动态电阻双向 SCR

双向可控硅 (DDSCR) 出色的面积效率使其成为低压和高压应用的理想选择。然而，为了实现所需的对称结构，传统的 DDSCR 必须延长其 ESD 放电路径。此外，现有 DDSCR 的低保持电压不适合高压应用。在这项研究中，提出了一种具有高保持电压和低动态电阻的新型 DDSCR，并验证了其电气特性。与传统的低触发电压 DDSCR (LTDDSCR) 相比，提议的 DDSCR 具有两个额外的内部寄生双极晶体管。自栅极偏置减少了 SCR 中寄生双极晶体管之间的锁存模式反馈。该器件使用 0.13 $\mu {\mathrm{ m}}$ BCD 处理和实施段布局，导致非常低的动态电阻 $2.2~{\Omega }$ 以及高达 17.2 V 的出色保持电压。建议的 DDSCR 展示了 12 V 应用的可靠性和面积效率的提高。