Technological feasibility of III-nitride vertical cavity surface emitting laser (VCSEL) has been hindered by the lack of an electrically conductive, easily manufacturable, wide reflection stop band distributed Bragg reflector (DBR). Here, we present the first electrically injected III-nitride VCSEL on an electrically conductive DBR using nanoporous (NP) GaN. The measured threshold current density and the maximum light output power were 42 kA/cm2 and 0.17 mW, respectively, at 434 nm. Vertical injection was demonstrated and showed no deterioration in the threshold current density or slope efficiency, demonstrating the feasibility of vertical injection in NP GaN VCSELs. Filamentary lasing was observed, and its effect on the slope efficiency and the lasing linewidth is studied. Initial measurements showing the correlation between the measured high threshold current density and surface undulations are presented and discussed.

中文翻译：

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c面GaN垂直腔面发射激光器在导电纳米多孔分布式布拉格反射器上的室温操作

III 族氮化物垂直腔面发射激光器 (VCSEL) 的技术可行性受到缺乏导电、易于制造、宽反射阻带分布布拉格反射器 (DBR) 的阻碍。在这里，我们使用纳米多孔 (NP) GaN 在导电 DBR 上展示了第一个电注入的 III 族氮化物 VCSEL。在 434 nm 处测得的阈值电流密度和最大光输出功率分别为 42 kA/cm2 和 0.17 mW。证明了垂直注入，阈值电流密度或斜率效率没有恶化，证明了垂直注入 NP GaN VCSEL 的可行性。观察了丝状激光，并研究了其对斜率效率和激光线宽的影响。