We report on the demonstration of InGaN photonic nanocrystal light emitting diodes (LEDs), which operate in the green wavelength (∼548 nm). The devices are designed to operate at the Γ point of the photonic band structure and exhibit a spectral linewidth ∼4 nm, which is nearly five to ten times narrower than that of conventional InGaN quantum well LEDs in this wavelength range. Significantly, the device performance, in terms of the emission peak and spectral linewidth, is nearly invariant with injection current, suggesting the insusceptibility to quantum-confined Stark effect commonly seen in InGaN quantum wells. The external quantum efficiency is characterized by a sharp rise with increasing current and reaches a maximum at ∼5 A/cm2, which is comparable to conventional blue quantum well LEDs. A relatively small (∼30%) efficiency droop was measured at an injection current density over 200 A/cm2 at room temperature without any active cooling.

中文翻译：

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具有超稳定运行的微米级 InGaN 绿色发光二极管

我们报告了 InGaN 光子纳米晶体发光二极管 (LED) 的演示，该二极管在绿色波长 (~548 nm) 下工作。该器件设计为在光子能带结构的 Γ 点工作，光谱线宽约为 4 nm，比该波长范围内的传统 InGaN 量子阱 LED 窄近 5 到 10 倍。值得注意的是，器件性能（在发射峰和光谱线宽方面）几乎不随注入电流而变化，这表明 InGaN 量子阱中常见的量子限制斯塔克效应不受影响。外量子效率的特点是随着电流的增加而急剧上升，并在~5 A/cm2 处达到最大值，这与传统的蓝色量子阱 LED 相当。