Electrical properties of carbon-doped halide vapor phase epitaxy-GaN are presented and discussed. Crystals of the highest structural quality and with different carbon concentrations are investigated. Resistivity and Hall measurements as a function of temperature are analyzed in detail. It is found that the concentration of free holes systematically decreases with the increase of carbon concentration. Such behavior results from the fact that the compensation of the carbon acceptor level increases with the carbon concentration. It is accepted that carbon is amphoteric impurity in GaN, creating an acceptor as well as a donor state, which leads to self-compensation. The analysis of existing electron paramagnetic resonance results is extremely important. It enabled us to determine the compensation ratio as a function of carbon concentration. A combination of electron paramagnetic resonance, secondary ion mass spectrometry, and Hall data allowed us to conclude that the acceptor level (CN) exhibits rather significant temperature shift equal to 0.35 meV/K.

中文翻译：

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HVPE-GaN:C 中碳的自补偿

介绍和讨论了碳掺杂卤化物气相外延-GaN 的电学特性。研究了具有最高结构质量和不同碳浓度的晶体。详细分析了作为温度函数的电阻率和霍尔测量值。发现自由空穴的浓度随着碳浓度的增加而系统地降低。这种行为是由于碳受体水平的补偿随着碳浓度的增加而增加的。众所周知，碳是 GaN 中的两性杂质，会产生受主和施主状态，从而导致自补偿。对现有电子顺磁共振结果的分析极为重要。它使我们能够确定作为碳浓度函数的补偿比率。