Abstract The semiconductor industry is based mainly on silicon (Si). Therefore, gas sensors based on Si that have high compatibility with semiconductor technology are among the most promising sensing devices. This study examined the effects of the sensing temperature, selectivity, and detection limits for real applications. This paper reports highly selective hydrogen gas sensors fabricated from Pd-decorated Si nano-horns (NHs). First, Si-NHs were prepared using a simple chemical etching method, which was followed by Pd-decoration using a UV irradiation technique. Electrical and gas sensing measurements showed that the resistance of the gas sensors was affected considerably by the sensing temperature as well as the size of the Pd nanoparticles (NPs). Furthermore, the optimized gas sensor could detect as little as 0.1 ppm H2 gas. The present sensors with exceptional performance toward hydrogen gas have potential use as Si-based hydrogen gas sensors.

中文翻译：

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钯装饰的硅纳米角作为灵敏和选择性的氢气传感器

摘要 半导体工业主要以硅 (Si) 为基础。因此，与半导体技术具有高度兼容性的基于Si的气体传感器是最有前途的传感设备之一。该研究检查了实际应用中传感温度、选择性和检测限的影响。本文报道了由 Pd 装饰的 Si 纳米角 (NHs) 制成的高选择性氢气传感器。首先，使用简单的化学蚀刻方法制备 Si-NH，然后使用紫外线照射技术进行 Pd 装饰。电气和气体传感测量表明，气体传感器的电阻受传感温度以及 Pd 纳米颗粒 (NPs) 的大小影响很大。此外，优化的气体传感器可以检测低至 0.1 ppm 的 H2 气体。