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Fabrication of highly efficient hybrid device structure based white light emitting diodes
Optical and Quantum Electronics ( IF 3 ) Pub Date : 2020-07-01 , DOI: 10.1007/s11082-020-02470-x
Akta Verma , S. K. Sharma , Chih-Hao Lin , Arumugam Manikandan , Hao-Chung Kuo

In this study, white light is generated from the combination of BaMgAl10O17:Mn2+ (BAM) green phosphor and colloidal red CdSe/ZnS quantum dots (QDs) via two different solid and hybrid type geometries. Problem of aggregation in solid type device is discussed in details and motivates us to move towards the fabrication of hybrid type device structure. The photoluminescence (PL) characterization was used to record the excitation and emission spectra of BAM and QDs materials. The size of CdSe/ZnS QDs was confirmed by transmission electron microscopy technique. The CdSe/ZnS QDs owned high quantum yield (> 50%) and contributed to fabrication of high luminous efficiency of white light emitting diodes (WLEDs). The hybrid-type WLED showed 98% lm/W with outstanding color gamut values with a National Television System Committee (NTSC) value of 138% and Rec.2020 value of 105%. Moreover, the hybrid type device structure shows only 5% attenuation in luminous efficiency after 500 h of storage which maintains a great optical property.

中文翻译:

基于高效混合器件结构的白光发光二极管的制造

在这项研究中,白光是由 BaMgAl10O17:Mn2+ (BAM) 绿色荧光粉和胶体红色 CdSe/ZnS 量子点 (QD) 通过两种不同的固体和混合型几何形状组合产生的。详细讨论了固体器件中的聚集问题,并促使我们朝着混合型器件结构的制造迈进。光致发光 (PL) 表征用于记录 BAM 和 QD 材料的激发和发射光谱。CdSe/ZnS QD 的尺寸通过透射电子显微镜技术得到证实。CdSe/ZnS量子点具有高量子产率(> 50%),有助于制造高发光效率的白光发光二极管(WLED)。混合型 WLED 显示 98% lm/W 具有出色的色域值,国家电视系统委员会 (NTSC) 值为 138% 和 Rec。2020 年价值 105%。此外,混合型器件结构在存储 500 小时后仅显示 5% 的发光效率衰减,保持了良好的光学性能。
更新日期:2020-07-01
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