Yttrium oxyfluoride was developed for use in the plasma process chamber using various corrosive gases. In this paper, sintered yttrium oxyfluorides with various Y, O, and F composition ratios (Y_xO_yF_z) and ion-plated YOF and Y₅O₄F₇ films were prepared, and the physical etching behavior due to Ar ion bombardment and NF₃/Ar plasma resistance was investigated. It was found that the etching rate of the sintered yttrium oxyfluoride due to the bombardment of Ar ions with an energy of 500 eV decreased as the oxygen composition ratio in the samples decreased, i.e., F-rich yttrium oxyfluoride had better resistance against energetic-ion bombardment. It was also found that the surface roughness of sintered YOF and Y₅O₄F₇, both of which had the stable phases, was much smoother after Ar ion bombardment than that of yttrium oxyfluorides without the stable phase. NF₃/Ar plasma resistance was also investigated. For the sintered yttrium oxyfluoride, both YOF and Y₅O₄F₇ showed good resistance against the NF₃/Ar plasma, where the ideal stoichiometric atomic composition ratio could be kept even after plasma irradiation. For both as-deposited ion-plated YOF and Y₅O₄F₇ films, the F composition ratio was slightly smaller than the ideal stoichiometric ratios, suggesting that some amount of fluorine was escaped from the starting materials of YOF and/or Y₅O₄F₇ during the ion-plated film deposition processes. After NF₃/Ar plasma irradiation, F composition ratios were increased for both ion-plated YOF and Y₅O₄F₇ films, and the atomic composition ratio becomes closer to the ideal stoichiometric ratios for both films.

中文翻译：

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具有各种Y，O和F组成比的烧结和离子镀氟化氧钇氟化物的耐等离子体性，用于等离子体处理室

开发了氟氧化钇，用于使用各种腐蚀性气体的等离子体处理室。本文制备了具有不同Y，O和F组成比（Y _x O _y F _z）的烧结氟化氧钇以及离子镀YOF和Y ₅ O ₄ F ₇膜，并研究了Ar离子引起的物理腐蚀行为轰炸和NF ₃研究了/ Ar等离子体电阻。研究发现，随着样品中氧含量的降低，由于能量为500 eV的Ar离子轰击而导致的烧结氟化氧钇的刻蚀速率降低，即富F的氟化氧钇具有更好的抗高能离子性能。轰击。还发现，具有稳定相的YOF和Y ₅ O ₄ F ₇烧结体的表面粗糙度在Ar离子轰击后比没有稳定相的氟氧化钇更平滑。还研究了NF ₃ / Ar等离子体电阻。对于烧结的氟氧化钇，YOF和Y ₅ O ₄ F _7均对NF ₃ / Ar等离子体显示出良好的抗性，即使在等离子体辐照后也可以保持理想的化学计量原子组成比。对于沉积的离子镀YOF和Y ₅ O ₄ F ₇薄膜，F组成比均比理想化学计量比稍小，这表明从YOF和/或Y _5的原材料中逸出了一些氟。在离子镀膜沉积过程中为O ₄ F ₇。NF ₃ / Ar等离子体辐照后，离子镀YOF和Y ₅ O ₄ F _7的F组成比均增加 薄膜的原子组成比变得更接近于理想的化学计量比。