The authors investigate unintentional Si doping in β-Ga₂O₃ thin films grown via plasma-assisted molecular beam epitaxy. By identifying the Si dopant cell and the radio frequency oxygen plasma source as the two major sources of unintentional Si present in the growth chamber, adjustments to the parameters controlling these sources allow for the reduction of unintentional Si doping in β-Ga₂O₃ films by over two orders of magnitude. Decreasing the temperature of the Si dopant cell when idle reduces the unintentional doping from 2 × 10¹⁸ to 3 × 10¹⁷cm⁻³. Furthermore, decreasing the oxygen plasma power from 300 to 250 and to 200 W results in the reduction of the unintentional Si doping from 3 × 10¹⁷ to 1 × 10¹⁶cm⁻³. The reduction in unintentional Si doping concentration allows for low doping density in the drift region of β-Ga₂O₃ devices to design for high breakdown voltage via plasma-assisted molecular beam epitaxy.

中文翻译：

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减少等离子体辅助分子束外延生长的β-Ga2O3中的无意硅掺杂

作者研究了通过等离子体辅助分子束外延生长的β- Ga ₂ O ₃薄膜中的无意Si掺杂。通过将硅掺杂剂电池和射频氧等离子体源确定为生长室内存在的两种无意硅的主要来源，调整控制这些离子源的参数可以减少β- Ga ₂ O ₃膜中的无意硅掺杂。超过两个数量级。闲置时降低Si掺杂单元的温度可将意外掺杂从2×10 ^18减少到3×10 ¹⁷ cm ^-3。此外，将氧等离子体功率从300降低至250和200W导致无意的Si掺杂从3×10 ^17降低至1×10 ¹⁶ cm ^-3。意外的Si掺杂浓度的降低允许在β- Ga ₂ O ₃器件的漂移区中的低掺杂密度，从而通过等离子体辅助分子束外延设计高击穿电压。