TiO₂ NWs doped with V, Cr and Sn ions are subjected to RF generated nitrogen plasma and characterized for variance in light transmission and optical bandgap. Structurally, the introduction of Sn⁴⁺ in the TiO₂ lattice causes defect broadening along the 〈1 0 0〉 direction of individual nanowires, causing lattice distortion. This is different to Cr³⁺ and V³⁺ doping, which etch TiO₂ {1 1 0} and {1 1 1} faces, causing increases in nanowire diameter. Nitrogen plasma irradiation affects no visible change in structure, but does reduce the areal density of the nanowires, subsequently yielding improved light transmission through the array. Tauc transformations of diffuse reflectance data show that the combination of metal-doping and plasma irradiation induce a decrease of the optical bandgap of the TiO₂ structures. This bandgap decrease is mainly attributed to deep-lattice nitrogen doping, resulting in optical band narrowing by localized N 2p states, created by β-N species present in the plasma.

掺杂有V，Cr和Sn离子的TiO ₂ NW受到RF产生的氮等离子体的影响，其特征在于光透射率和光带隙的变化。在结构上，在TiO ₂晶格中引入Sn ⁴⁺会导致缺陷沿着单个纳米线的<1 0 0>方向扩展，从而导致晶格畸变。这与腐蚀TiO _2的Cr ³⁺和V ³⁺掺杂不同。{1 1 0}和{1 1 1}面，导致纳米线直径增加。氮等离子体辐照不会影响结构的可见变化，但会降低纳米线的面密度，从而提高通过阵列的光透射率。漫反射数据的Tauc变换表明，金属掺杂和等离子辐射的组合导致TiO ₂结构的光学带隙减小。该带隙减小主要归因于深晶格氮掺杂，其导致的光带由于等离子体中存在的β-N物种而产生的局部N 2p状态变窄。