This work discusses the preparation and formation of macro porous silicon (PSi) with silicon nano pillars; synthesized via laser–induced etching. The role of laser pulse duty cycle (10–100%) was investigated for silicon nano pillars samples creation using laser diode; characterized by its short wavelength (405 nm) and high laser intensity (500 mW/cm 2 ). Morphological and spectroscopic aspects of the Si nanocrystallite sizes and plasmonic Au–NP, surface topography, roughness and thickness of the created layer were investigated by the scanning probe microscopy, photoluminescence measurements, the analysis of (FESEM) images and (XRD) patterns. The results revealed well-regulated Si nano pillars layers after adjusting the laser duty cycle under the same laser intensity and etching time. The histogram of Si nano pillars sizes, surface roughness and altitude of nano pillars within macro PSi created at 20% laser duty cycle showed specific characteristics; due to the minimal heat accumulation within the pillars and limited probability of damaging the pillars’ morphological aspects. The Si nano pillars were employed to synthesize and control the plasmonic features of Au-NPs. The histogram of hotspot regions and plasmonic Au-NPs sizes and their specific surface areas and grain size showed well-controlled structures after adjusting the laser pulse duty cycle.

中文翻译：

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通过脉冲激光诱导蚀刻可控地形成等离子体金纳米粒子

这项工作讨论了具有硅纳米柱的大多孔硅 (PSi) 的制备和形成；通过激光诱导蚀刻合成。研究了激光脉冲占空比 (10-100%) 在使用激光二极管制作硅纳米柱样品中的作用；其特点是波长短 (405 nm) 和激光强度高 (500 mW/cm 2 )。通过扫描探针显微镜、光致发光测量、（FESEM）图像和（XRD）图案分析，研究了Si纳米微晶尺寸和等离子体Au-NP的形态和光谱、表面形貌、粗糙度和所产生层的厚度。结果表明，在相同的激光强度和蚀刻时间下，调整激光占空比后，Si纳米柱层得到了良好的调节。Si纳米柱尺寸的直方图，在 20% 激光占空比下产生的宏观 PSi 中纳米柱的表面粗糙度和高度显示出特定的特性；由于支柱内的热量积累最少，并且损坏支柱形态方面的可能性有限。Si纳米柱被用来合成和控制Au-NPs的等离子体特征。在调整激光脉冲占空比后，热点区域和等离子体 Au-NPs 尺寸及其比表面积和晶粒尺寸的直方图显示出良好控制的结构。Si纳米柱被用来合成和控制Au-NPs的等离子体特征。在调整激光脉冲占空比后，热点区域和等离子体 Au-NPs 尺寸及其比表面积和晶粒尺寸的直方图显示出良好控制的结构。Si纳米柱被用来合成和控制Au-NPs的等离子体特征。在调整激光脉冲占空比后，热点区域和等离子体 Au-NPs 尺寸及其比表面积和晶粒尺寸的直方图显示出良好控制的结构。