The capped Si expels completely the Ge dimers on top of the epi Ge(001)-2 × 1 and exhibits a multiphase electronic structure consisting of strained surface atoms bonded with Ge in the film. The deposition of molecular oxygen at room temperature removes a portion of the segregated Ge atoms and oxidizes some of the rest. The surface Si atoms exhibit 1+ to 4+ charge states. Heat eliminates the embedded Ge in the capped Si film and transfers the oxygen bonded with the surface Ge to Si. The oxidation reactions occur primarily on the capped Si surface region without involving the Si/Ge interface.

中文翻译：

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Epi Ge（001）-2×1上低温生长的单晶硅及其氧化：通过同步加速器辐射光发射的电子结构研究

封端的Si完全排出了外延Ge（001）-2×1顶部的Ge二聚体，并显示出多相电子结构，该结构由与Ge结合的应变表面原子组成。在室温下沉积分子氧会除去一部分偏析的Ge原子，并氧化其余的一部分。表面Si原子表现出1+至4+的电荷态。热量消除了覆盖的硅膜中嵌入的Ge，并将与表面Ge结合的氧转移到Si。氧化反应主要发生在封盖的Si表面区域上，而不涉及Si / Ge界面。