High‐performance and low‐voltage organic and inorganic field‐effect transistors (FETs) with solid‐state electrolyte gate insulator that is composed of an exceptional high‐k fluorinated dielectric and an ion‐gel‐blend polymer matrix are reported. The structuring polymer is high‐k poly(vinylidenefluoride‐trifluoroethylene‐chlorotrifluoroethylene) (P(VDF‐TrFE‐CTFE)) terpolymer. The ion gel is made of poly(vinylidene fluoride‐co‐hexafluroropropylene) (P(VDF‐HFP)) and 1‐ethyl‐3‐methylimidazolium bis(trifluoromethylsulfonyl) imide ([EMIM][TFSI]) ion liquid. The blend polymer matrix has high measured capacitance of ≈2 to 5.5 µF cm⁻² at 100 Hz, which is attributed to formation of electrical double layers (EDLs) at the insulator/semiconductor interface. High effective carrier mobility (μ_eff) and low operating voltage ≤2 V with just 0.5 v% of P(VDF‐HFP)‐[EMIM][TFSI] solution in the bulk P(VDF‐TrFE‐CTFE) insulating layer are demonstrated, coupled with low gate‐leakage current levels. Excellent μ_eff = 1.30 ± 0.19 cm² V⁻¹ s⁻¹ is achieved in P3HT FETs with SEGI, which is a remarkable boost from 0.48 ± 0.09 cm² V⁻¹ s⁻¹ at 30 V when pure P(VDF‐TrFE‐CTFE) dielectric is used. Other semiconductors are also tested: IGZO has μ_eff = 11.09 ± 2.07 cm² V⁻¹ s⁻¹, and PDFDT has μ_eff = 2.42 ± 0.46 cm² V⁻¹ s⁻¹. These remarkable increases in mobility are attributed to the high concentration of induced carriers in the semiconducting channel.

中文翻译：

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基于高性能High-k P（VD​​F-TrFE-CTFE）三元共聚物的固态电解质电介质，用于高性能场效应晶体管

据报道，具有固态电解质栅绝缘体的高性能，低压有机和无机场效应晶体管（FET）由出色的高k氟化电介质和离子凝胶混合聚合物基质组成。结构聚合物是高k聚（偏二氟乙烯-三氟乙烯-氯三氟乙烯）（P（VDF-TrFE-CTFE））三元共聚物。离子凝胶由聚偏二氟乙烯-共-六氟丙烯（P（VDF-HFP））和1-乙基-3-甲基咪唑鎓双（三氟甲基磺酰基）酰亚胺（[EMIM] [TFSI]）离子液体制成。共混聚合物基质的测得静电容量约为≈2至5.5 µF cm ^-2频率为100 Hz，这归因于在绝缘体/半导体界面处形成了双电层（EDL）。在大块P（VDF-TrFE-CTFE）绝缘层中展示了仅0.5 v％的P（VDF-HFP）-[EMIM] [TFSI]解决方案的高效有效载流子迁移率（_μeff）和≤2 V的低工作电压，加上较低的栅极漏电流水平。使用SEGI的P3HT FET可获得出色的_μeff  = 1.30±0.19 cm ² V ^-1 s ^-1，与纯P（VDF-TrFE）在30 V时的0.48±0.09 cm ² V ^-1 s ^-1相比有显着提高-CTFE）电介质。还测试了其他半导体：IGZO的_μeff  = 11.09±2.07 cm² V ^-1小号^-1，和PDFDT具有μ _EFF  = 2.42±0.46厘米² V ^-1小号^-1。迁移率的这些显着增加归因于半导体沟道中感应载流子的高浓度。