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Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by oxygen ion implantation
Materials Science and Engineering: B ( IF 3.6 ) Pub Date : 2020-07-08 , DOI: 10.1016/j.mseb.2020.114616
Vishal Kumar Aggarwal , Ankita Ghatak , Dinakar Kanjilal , Debdulal Kabiraj , Achintya Singha , Sandip Bysakh , Samar Kumar Medda , Supriya Chakraborty , A.K. Raychaudhuri

The paper reports fabrication of Germanium-on-Insulator (GeOI) wafer by Oxygen ion implantation of an undoped Ge wafer of orientation (1 0 0). O+ ions (energy 200 keV) were implanted to a fluence of 1.9 × 1018 ions-cm−2 and the implanted wafer was subjected to Rapid Thermal Annealing. The resulting wafer has a top crystalline Ge layer of ~ 220 nm thickness and resistivity ≈32 Ohm-cm and a buried Oxide layer (BOX) of crystalline GeO2 (thickness ≈0.62 μm). The crystalline GeO2 layer has hexagonal crystal structure with lattice constants close to the standard values. Raman Spectroscopy and cross-sectional electron microscopy established that the top Ge layer was recrystallized during annealing with a residual tensile strain of around +0.4% and an estimated dislocation density of 2.7 × 107cm−2. The crystallinity and electrical characteristics of the top layer and the quality of the BOX layer are such that it can be utilized for device fabrication.



中文翻译:

通过氧离子注入在具有晶体Ge顶层和掩埋GeO 2层的Ge晶片中制备绝缘体上锗

该论文报道了通过取向为(1 0 0)的未掺杂Ge晶片的氧离子注入来制造绝缘体上锗(GeOI)晶片的方法。以1.9×10 18离子-cm -2的通量注入O +离子(能量为200 keV),并对注入的晶片进行快速热退火。所得晶片具有约220 nm厚度的顶部晶体Ge层和≈32Ohm-cm的电阻率,以及晶体GeO 2(厚度≈0.62μm)的掩埋氧化物层(BOX )。结晶GeO 2层具有六方晶体结构,其晶格常数接近标准值。拉曼光谱法和横截面电子显微镜法确定,在退火过程中,顶层Ge层再结晶,残余拉伸应变约为+ 0.4%,估计位错密度为2.7×10 7 cm -2。顶层的结晶度和电学特性以及BOX层的质量使得可以将其用于器件制造。

更新日期:2020-07-08
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