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V doped BaSnO3 nanocubes as a Field emitting material: Experimental and theoretical investigation
Applied Surface Science ( IF 6.7 ) Pub Date : 2020-11-01 , DOI: 10.1016/j.apsusc.2020.147102
Suvra Pal , Nirmalya Sankar Das , Brahami Das , Bikram Kumar Das , Subhadipta Mukhopadhyay , Kalyan Kumar Chattopadhyay

Abstract In search of a multipurpose perovskite system pure and vanadium doped BaSnO3 nanocubes were prepared using facile solid-state reaction method. Theoretical simulation via ANSYS Maxwell software was employed to predict whether doping in nano-BaSnO3 can lead to cold electron emission from the samples. The work function, a crucial factor for potential cold cathodes, was determined using density functional theory and the outcome was used to calculate the field enhancement factor. Encouraged by theoretical outcome, experimental investigation for field emission capability of the samples was carried out in a high vacuum chamber. Several factors like impurity doping, emitter dimension, decrement of work function were identified as tuning factors. The emission current density and the field enhancement factor of 5% doped sample were enhanced ~3 and 4.3 times respectively compared to the pure one with 30% reduction of the turn on field. The first ever investigation of field emission properties of pure and doped BaSnO3 in this work, showed that the novel perovskite can serve as an environment-friendly cold cathodes in field emission display unit, electron microscopes etc. along with its traditional application as solar energy harvesting material.

中文翻译:

V 掺杂 BaSnO3 纳米立方体作为场发射材料:实验和理论研究

摘要 为了寻找一种多用途的钙钛矿体系,采用简便的固态反应方法制备了纯钒掺杂的 BaSnO3 纳米立方体。通过 ANSYS Maxwell 软件的理论模拟被用来预测纳米 BaSnO3 中的掺杂是否会导致样品的冷电子发射。功函数是潜在冷阴极的关键因素,使用密度泛函理论确定,结果用于计算场增强因子。受理论结果的鼓舞,在高真空室中对样品的场发射能力进行了实验研究。杂质掺杂、发射极尺寸、功函数递减等几个因素被确定为调谐因素。与纯样品相比,5% 掺杂样品的发射电流密度和场增强因子分别提高了约 3 倍和 4.3 倍,导通场降低了 30%。在这项工作中首次对纯和掺杂 BaSnO3 的场发射特性进行了研究,表明新型钙钛矿可以作为场发射显示单元、电子显微镜等中的环保冷阴极,以及其作为太阳能收集的传统应用材料。
更新日期:2020-11-01
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