Thin-film material libraries in the ternary and quaternary metal oxide systems Fe–V–O, Cu–V–O, and Cu–Fe–V–O were synthesized using combinatorial reactive co-sputtering with subsequent annealing in air. Their compositional, structural, and functional properties were assessed using high-throughput characterization methods. Prior to the investigation of the quaternary system Cu–Fe–V–O, the compositions (Fe₆₁V₃₉)O_x and (Cu₅₂V₄₈)O_x with promising photoactivity were identified from their ternary subsystems Fe–V–O and Cu–V–O, respectively. Two Cu–Fe–V–O material libraries with (Cu_29-72Fe_4-27V_22-57)O_x and (Cu_11-55Fe_27-73V_12-34)O_x composition spread were investigated. Seven mixed ternary and quaternary phase regions were identified: I (α-Cu₃FeV₆O₂₆/FeVO₄), II (Cu₅V₂O₁₀/FeVO₄/α-Cu₃Fe₄V₆O₂₆), III (Cu₅V₂O₁₀), IV (Cu₅V₂O₁₀/FeVO₄, V (FeVO₄/γ-Cu₂V₂O₇/α-Cu₃Fe₄V₆O₂₆), VI (β-Cu₂V₂O₇/α-Cu₃Fe₄V₆O₂₆/FeVO₄), and VII (β-Cu₃Fe₄V₆O₂₆/FeVO₄). In the investigated composition range, two photoactive regions, (Cu₅₃Fe₇V₄₀)O_x and (Cu₄₅Fe₂₁V₃₄)O_x, were identified, exhibiting 103 μA/cm² and 108 μA/cm² photocurrent density for the oxygen evolution reaction at 1.63 V vs reversible hydrogen electrode, respectively. The highest photoactive region (Cu₄₅Fe₂₁V₃₄)O_x comprises the dominant α-Cu₃Fe₄V₆O₂₄ phase and minor FeVO₄ phase. This photoactive region corresponds to having an indirect bandgap of 1.87 eV and a direct bandgap of 2.58 eV with an incident photon-to-current efficiency of 30% at a wavelength of 310 nm.

中文翻译：

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薄膜系统Cu-Fe-VO及其三元子系统Fe-VO和Cu-VO的结构和光电化学性质。

三元和四元金属氧化物系统Fe–V–O，Cu–V–O和Cu–Fe–V–O的薄膜材料库是使用组合反应共溅射和随后在空气中退火的方法合成的。使用高通量表征方法评估了它们的组成，结构和功能特性。在研究四元系统Cu–Fe–V–O之前，从其三元子系统Fe–V–O和C–Fe–V–O中确定了具有前途光活性的（Fe ₆₁ V ₃₉）O _x和（Cu ₅₂ V ₄₈）O _x组成。铜–钒–氧。两个具有（Cu _29-72 Fe _4-27 V _22-57）O的Cu–Fe–V–O材料库_研究了x和（Cu _11-55 Fe _27-73 V _12-34）O _x组成分布。鉴定七个混合三元和四元相区：I（α-Cu系₃钒铁₆ ö ₂₆ / FeVO ₄），II（铜₅ V ₂ ö ₁₀ / FeVO ₄ /α-Cu系₃的Fe ₄ V ₆ ø ₂₆），III （Cu ₅ V ₂ O ₁₀），IV（Cu ₅ V ₂ O ₁₀ / FeVO ₄，V（FeVO ₄ /γ-Cu系₂ V ₂ ö ₇ /α-Cu系₃的Fe ₄ V ₆ ø ₂₆），VI（β-Cu系₂ V ₂ ö ₇ /α-Cu系₃的Fe ₄ V ₆ ø ₂₆ / FeVO ₄），和第七（β-Cu系₃的Fe ₄ V ₆ ø ₂₆ / FeVO ₄）。在研究的组成范围内，两个光敏区域为（Cu ₅₃ Fe ₇ V ₄₀）O _x和（Cu鉴定出₄₅ Fe ₂₁ V ₃₄）O _x，与可逆氢电极相比，在1.63 V的氧气逸出反应中分别显示出103μA / cm ²和108μA / cm ^2的光电流密度。最高光活性区域（铜₄₅的Fe ₂₁ V ₃₄）O _X包括主导α-Cu系₃的Fe ₄ V ₆ ø ₂₄相和次要FeVO ₄相。该光敏区域对应于在310 nm波长处具有1.87 eV的间接带隙和2.58 eV的直接带隙，入射光子-电流效率为30％。