当前位置: X-MOL 学术Sci. Rep. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based heterostructures.
Scientific Reports ( IF 4.6 ) Pub Date : 2020-07-07 , DOI: 10.1038/s41598-020-67950-2
Vibhu Srivastava 1 , Prateek Mishra 1 , Sunny 1
Affiliation  

Heterostructures (HS) have always been in attraction due to their inherited properties and different important applications. Integration of a phase-change material (PCM) with HS can tremendously extend the operating and application range using the “phase-tuning” of PCM for any optoelectronic devices. In the present study, we report a detailed study of electrical and optoelectronic characteristics of a p-p and p-n HS combining Ge2Sb2Te5 (GST) and Si. Reasonable 2 order of resistance switching is achieved by thermal annealing. The changes in optical properties are analysed using Ellipsometry, UV–Vis–NIR and Raman spectroscopy to speculate the optoelectronic behaviour of GST/Si samples. The optical and electrical characterization were analysed with aluminium (Al), platinum (Pt) and Ti/Au contacts. Appreciable rectifications varying from 500 to 1,000 at lower voltages are achieved with different contacts for both phases of GST. The change in rectification amount and current polarity are obtained with different kinds of contacts and at different incident wavelengths indicating different mechanisms of charge separation and collection. Responsivity of more than 9 A/W with < 1,000 photo-current to dark-current ratio is demonstrated in wavelength range of 0.8–2 μm under moderate range of biasing under ~ μW source power illumination. The characteristics obtained were justified with the prediction of band alignment with the help of work-function difference measurement by Kelvin-probe force microscopy and carrier density measurement by Hall experiment. Our results provide understanding to the opto-electrical behaviour of a heterojunction made of stacking PCM (GST) on Si highlighting their future use in photonic/optoelectronic-integrated circuits.



中文翻译:

CMOS兼容的新型集成解决方案,可使用基于相变材料的异质结构进行大范围可调光检测。

异质结构(HS)由于其继承的特性和不同的重要应用而一直备受关注。通过将相变材料(PCM)与HS集成在一起,可以通过对任何光电设备使用PCM的“相位调整”来极大地扩展操作和应用范围。在本研究中,我们报告了结合Ge 2 Sb 2 Te 5的pp和pn HS的电学和光电特性的详细研究(GST)和Si。通过热退火可以实现合理的2阶电阻切换。使用椭偏仪,UV-Vis-NIR和拉曼光谱分析光学性质的变化,以推测GST / Si样品的光电行为。使用铝(Al),铂(Pt)和Ti / Au触点分析了光学和电气特性。在GST的两相使用不同的触点,可以在较低的电压下实现从500到1,000的明显整流。整流量和电流极性的变化是通过不同类型的触点获得的,并且在不同的入射波长下获得的,表明电荷分离和收集的机制不同。在0的波长范围内,光电流与暗电流之比小于1,000时,响应速度超过9 A / W。在〜μW的源功率照射下,在中等偏置范围内为8–2μm。借助开尔文探针力显微镜的功函数差测量和霍尔实验的载流子密度测量,借助能带对准的预测来证明所获得的特性是合理的。我们的结果提供了对在Si上堆叠PCM(GST)制成的异质结的光电性能的理解,突显了它们在光子/光电集成电路中的未来用途。

更新日期:2020-07-07
down
wechat
bug