当前位置: X-MOL 学术Phys. Status Solidi A › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Improving the Current‐Spreading Effect for GaN‐Based Quasi‐Vertical PIN Diode by Using an Embedded PN Junction
Physica Status Solidi (A) - Applications and Materials Science ( IF 2 ) Pub Date : 2020-07-07 , DOI: 10.1002/pssa.202000146
Yajin Liu 1, 2 , Xingyu Jia 1, 2 , Yonghui Zhang 1, 2 , Zi-Hui Zhang 1, 2
Affiliation  

GaN‐based quasi‐vertical PIN diodes are grown on insulating sapphire substrates, and thus both the n‐electrode and the p‐electrode are made on the same side, which causes lateral current injection scheme. Therefore, one of the challenges for this design lies in the serious current crowding at the mesa edges, which leads to the local hole accumulation, and thus the Auger recombination significantly gives rise to the poor conductivity modulation in the drift region when the devices are forwardly biased. Herein, utilizing an embedded PN–GaN junction is proposed, such that the embedded PN–GaN junction is reversely biased when the PIN diode is in the on‐state condition. The built‐in electric field in the reversely biased PN–GaN junction depletes holes at the mesa edges, and correspondingly the Auger recombination can be decreased. The results also show that the proposed structures do not affect the breakdown voltage for PIN diodes.

中文翻译:

通过使用嵌入式PN结改善基于GaN的准垂直PIN二极管的电流扩展效应

在绝缘的蓝宝石衬底上生长基于GaN的准垂直PIN二极管,因此n电极和p电极都在同一侧制作,这导致了横向电流注入方案。因此,挑战之一这种设计的原因在于,严重的电流拥挤在台面边缘,导致局部空穴积累,因此,当器件正向偏置时,俄歇复合会明显导致漂移区的电导率调制变差。本文中,提出了利用嵌入式PN-GaN结的方法,这样,当PIN二极管处于导通状态时,嵌入式PN-GaN结会反向偏置。反向偏置的PN-GaN结中的内置电场会耗尽台面边缘的空穴,从而可以减少俄歇复合。结果还表明,所提出的结构不影响PIN二极管的击穿电压。
更新日期:2020-07-07
down
wechat
bug