Abstract

Indium oxide is a transparent semiconductor widely used in optical-electronic systems of the visible and near infrared range, but insufficiently studied in the terahertz frequency range. In this study, the dielectric response function of indium oxide thin films on glass substrates was investigated by terahertz and infrared spectroscopy techniques to determine the effect of free carriers on the optical characteristics of films. The experimental results were analyzed applying multiparametric dispersion model of Drude–Lorentz. The basic electrodynamic parameters of In₂O₃ films are determined. Model transmission and conductivity spectra for films of different thickness are calculated. The possibility of using thin films of indium oxide as a transparent conductive layer in terahertz optoelectronics devices is shown.

中文翻译：

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太赫兹和红外光谱法测定In 2 O 3薄膜的电动力学参数

摘要

氧化铟是一种透明半导体，广泛用于可见光和近红外范围的光电子系统，但在太赫兹频率范围内研究不足。在这项研究中，通过太赫兹和红外光谱技术研究了玻璃基板上氧化铟薄膜的介电响应函数，以确定自由载流子对薄膜光学特性的影响。使用Drude–Lorentz的多参数弥散模型分析了实验结果。In ₂ O ₃的基本电动力学参数电影确定了。计算了不同厚度的薄膜的模型透射率和电导率光谱。显示了在太赫兹光电器件中使用氧化铟薄膜作为透明导电层的可能性。