Identification of two-dimensional (2D) materials with magnetic properties has received strong research attention in the development of advanced spin-based devices. By means of first-principles calculations, we investigate the stability, electronic properties, and the hole-doping-induced magnetic properties of metal oxide ($M\mathrm{O}, M=\mathrm{Ga},\mathrm{In}$) monolayers. They are intrinsically nonmagnetic stable semiconductors, with high energetic, vibrational, and thermal stability. Hole doping can switch them from nonmagnetic to ferromagnetic and turn them into half-metals over a wide range of hole densities. Monte Carlo simulations predict that the highest Curie temperature of the GaO monolayer can reach ∼125 K. Our results indicate that monolayer $M\mathrm{O}$ could be eligible candidate materials for 2D spintronic devices.

中文翻译：

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空穴掺杂在二维MO（M = Ga，In）单层中的铁磁性和半金属性

具有磁性的二维（2D）材料的识别在高级自旋器件的开发中受到了广泛的研究关注。通过第一性原理计算，我们研究了金属氧化物的稳定性，电子性能以及空穴掺杂引起的磁性能（$\mathrm{中号}\mathrm{Ø}， \mathrm{中号}=嘎，在$）单层。它们本质上是非磁性稳定的半导体，具有高的能量，振动和热稳定性。空穴掺杂可以将它们从非磁性转变为铁磁性，并且可以在很大的空穴密度范围内将它们变成半金属。蒙特卡罗模拟预测，GaO单层的最高居里温度可以达到约125K。我们的结果表明，单层$\mathrm{中号}\mathrm{Ø}$ 可能是2D自旋电子设备的合格候选材料。