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Structural, electronic, and magnetic properties of vanadium-based Janus dichalcogenide monolayers: A first-principles study
Physical Review Materials ( IF 3.4 ) Pub Date : 2020-07-06 , DOI: 10.1103/physrevmaterials.4.074002 Dibyendu Dey , Antia S. Botana
Physical Review Materials ( IF 3.4 ) Pub Date : 2020-07-06 , DOI: 10.1103/physrevmaterials.4.074002 Dibyendu Dey , Antia S. Botana
The structural, electronic, and magnetic properties of VSSe, VSeTe, and VSTe monolayers in both 2H and 1T phases are investigated via first-principles calculations. The 2H phase is energetically favorable in VSSe and VSeTe, whereas the 1T phase is lower in energy in VSTe. For V-based Janus monolayers in the 2H phase, calculations of the magnetic anisotropy show an easy-plane for the magnetic moment. As such, they should not exhibit a ferromagnetic phase transition, but instead, a Berezinskii-Kosterlitz-Thouless (BKT) transition. A classical XY model with nearest-neighbor coupling estimates critical temperatures () ranging from 106 K for VSSe to 46 K for VSTe.
中文翻译:
钒基Janus二硫化碳单分子膜的结构,电子和磁性:第一性原理研究
通过第一性原理计算,研究了2H和1T相中VSSe,VSeTe和VSTe单层的结构,电子和磁性。在VSSe和VSeTe中2H相在能量上有利,而在VSTe中1T相的能量较低。对于2H相中基于V的Janus单层,磁各向异性的计算显示出磁矩的易平面。因此,它们不应表现出铁磁相变,而应表现出Berezinskii-Kosterlitz-Thouless(BKT)跃迁。具有近邻耦合的经典XY模型估计临界温度()范围从VSSe的106 K到VSTe的46K。
更新日期:2020-07-06
中文翻译:
钒基Janus二硫化碳单分子膜的结构,电子和磁性:第一性原理研究
通过第一性原理计算,研究了2H和1T相中VSSe,VSeTe和VSTe单层的结构,电子和磁性。在VSSe和VSeTe中2H相在能量上有利,而在VSTe中1T相的能量较低。对于2H相中基于V的Janus单层,磁各向异性的计算显示出磁矩的易平面。因此,它们不应表现出铁磁相变,而应表现出Berezinskii-Kosterlitz-Thouless(BKT)跃迁。具有近邻耦合的经典XY模型估计临界温度()范围从VSSe的106 K到VSTe的46K。