Heterojunctions based on two-dimensional (2D)/three-dimensional (3D) semiconductors have become an integral component of next-generation optoelectronic devices. Here, we report the photodetection and electrical transport properties of SnS₂/p-Si heterojunction. The device shows a high spectral responsivity of 3.04 A/W (at an applied reverse bias of 1 V) at a wavelength of 560 nm, with response/recovery times of 32.7/9.8 μs. The nonlinear dependence of photocurrent on the incident light power density observed in the present investigation is attributed to the presence of interfacial defects, which corroborates the anomalies observed in the electrical transport analysis of the device in the temperature range of 85–300 K. The current–voltage characteristics suggest a nonideal behavior, and this deviation is due to the surface or interfacial defects and an inhomogeneity of barrier heights (BHs) at the heterointerface. These barrier inhomogeneities have been explained using a double Gaussian distribution of BHs, based on the thermionic emission theory. The mean BHs are estimated to be 0.65 and 1.35 eV in two different temperature regions, that is, 85–140 and 180–300 K, respectively. The present analysis would be beneficial for fabrication of high-quality and low-cost photonic devices and facilitate deeper understanding of the electrical properties of such 2D/3D heterojunctions.

中文翻译：

---

SnS ₂ / p-Si异质结的温度依赖性电传输和光电性能

基于二维（2D）/三维（3D）半导体的异质结已成为下一代光电器件的组成部分。在这里，我们报告SnS ₂的光电检测和电传输性质/ p-Si异质结。该器件在560 nm波长下显示3.04 A / W的高光谱响应度（在施加1 V的反向偏压时），响应/恢复时间为32.7 / 9.8μs。在本研究中观察到的光电流对入射光功率密度的非线性依赖性归因于界面缺陷的存在，这证实了在85-300 K的温度范围内器件的电迁移分析中观察到的异常。 –电压特性表明存在非理想行为，该偏差是由于表面或界面缺陷以及异质界面上的势垒高度（BH）不均匀而引起的。基于热电子发射理论，使用双高斯分布的BHs解释了这些势垒不均匀性。平均BH估计为0。在两个不同的温度范围内分别为65和1.35 eV，分别为85–140和180–300K。本分析将有利于制造高质量和低成本的光子器件，并有助于更深入地了解这种2D / 3D异质结的电学性质。