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In Situ Preparation of VO2 Films with Controlled Ionized Flux Density in HiPIMS and Their Regulation of Thermal Radiance
ACS Applied Electronic Materials ( IF 4.7 ) Pub Date : 2020-07-06 , DOI: 10.1021/acsaelm.0c00383
Feifei Ren 1 , Hang Wei 1 , Jinxin Gu 2 , Long Li 1 , Bo Wang 1 , Jiupeng Zhao 2 , Gaoping Xu 1 , Yingming Zhao 1 , Xiaobai Li 1 , Shuliang Dou 1 , Yao Li 1
Affiliation  

Vanadium dioxide is a well-known phase-change material on account of its unique changes of optical property, which has seen a great increase in its implementation for the regulation of thermal radiance. However, the fabrication of VO2 needs strict conditions for its narrow sliver in the phase diagram. In this paper, in situ preparation of VO2 films by high-power impulse magnetron sputtering is proposed, in which ionized flux density is used to direct the crystal growth. Besides, the surface structure and thermochromic behaviors of the deposited films are studied in detail. Furthermore, simulations are carried out for the sake of optimizing the thickness of VO2 films with the largest emissivity modulation ability, and the experimental result reveals that their tuning range reaches up to 0.32. It is believed that our work will find wide applications not only in fundamental material science but also in thermal radiance regulation.

中文翻译:

HiPIMS中电离通量密度受控的VO 2薄膜的原位制备及其热辐射调节

由于二氧化钒具有独特的光学性质变化,因此它是一种众所周知的相变材料,而二氧化钒在调节热辐射方面的实施已大大增加。但是,VO 2的制备需要严格的条件,因为其相图中的银条较窄。本文提出了利用大功率脉冲磁控溅射原位制备VO 2薄膜的方法,该方法利用电离通量密度来指导晶体生长。此外,还详细研究了沉积膜的表面结构和热致变色行为。此外,为了优化VO 2的厚度而进行模拟发射率调制能力最大的薄膜,实验结果表明它们的调谐范围高达0.32。相信我们的工作将不仅在基础材料科学领域而且在热辐射调节方面找到广泛的应用。
更新日期:2020-07-28
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