当前位置: X-MOL 学术Nanophotonics › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Systematic studies for improving device performance of quantum well infrared stripe photodetectors
Nanophotonics ( IF 7.5 ) Pub Date : 2020-07-04 , DOI: 10.1515/nanoph-2020-0095
Mel F. Hainey 1 , Takaaki Mano 1 , Takeshi Kasaya 1 , Tetsuyuki Ochiai 1 , Hirotaka Osato 1 , Kazuhiro Watanabe 1 , Yoshimasa Sugimoto 1 , Takuya Kawazu 1 , Yukinaga Arai 1 , Akitsu Shigetou 1 , Hideki T. Miyazaki 1
Affiliation  

Abstract The integration of quantum well infrared photodetectors with plasmonic cavities has allowed for demonstration of sensitive photodetectors in the mid-infrared up to room-temperature operating conditions. However, clear guidelines for optimizing device structure for these detectors have not been developed. Using simple stripe cavity detectors as a model system, we clarify the fundamental factors that improve photodetector performance. By etching semiconductor material between the stripes, the cavity resonance wavelength was expected to blue-shift, and the electric field was predicted to strongly increase, resulting in higher responsivity than unetched stripe detectors. Contrary to our predictions, etched stripe detectors showed lower responsivities, indicating surface effects at the sidewalls and reduced absorption. Nevertheless, etching led to higher detectivity due to significantly reduced detector dark current. These results suggest that etched structures are the superior photodetector design, and that appropriate sidewall surface treatments could further improve device performance. Finally, through polarization and incidence angle dependence measurements of the stripe detectors, we clarify how the design of previously demonstrated wired patch antennas led to improved device performance. These results are widely applicable for cavity designs over a broad range of wavelengths within the infrared, and can serve as a roadmap for improving next-generation infrared photodetectors.

中文翻译:

提高量子阱红外条纹光电探测器器件性能的系统研究

摘要 量子阱红外光电探测器与等离子体腔的集成允许在中红外至室温工作条件下演示灵敏的光电探测器。然而,还没有制定明确的指导方针来优化这些探测器的设备结构。使用简单的条纹腔探测器作为模型系统,我们阐明了提高光电探测器性能的基本因素。通过蚀刻条纹之间的半导体材料,预计腔共振波长会发生蓝移,并且预计电场会强烈增加,从而导致比未蚀刻的条纹探测器具有更高的响应度。与我们的预测相反,蚀刻条纹探测器显示出较低的响应度,表明侧壁的表面效应和吸收减少。尽管如此,由于显着降低了检测器暗电流,蚀刻导致更高的检测率。这些结果表明蚀刻结构是优越的光电探测器设计,适当的侧壁表面处理可以进一步提高器件性能。最后,通过条纹检测器的极化和入射角相关性测量,我们阐明了先前演示的有线贴片天线的设计如何提高了设备​​性能。这些结果广泛适用于红外范围内广泛波长的腔设计,并可作为改进下一代红外光电探测器的路线图。适当的侧壁表面处理可以进一步提高器件性能。最后,通过条纹检测器的极化和入射角相关性测量,我们阐明了先前演示的有线贴片天线的设计如何提高了设备​​性能。这些结果广泛适用于红外范围内广泛波长的腔设计,并可作为改进下一代红外光电探测器的路线图。适当的侧壁表面处理可以进一步提高器件性能。最后,通过条纹检测器的极化和入射角相关性测量,我们阐明了先前演示的有线贴片天线的设计如何提高了设备​​性能。这些结果广泛适用于红外范围内广泛波长的腔设计,并可作为改进下一代红外光电探测器的路线图。
更新日期:2020-07-04
down
wechat
bug