The orientation modulation of ferroelectric materials is a suitable method to optimize material performance. Textured Bi_1‐xSm_xFeO₃ thin films (near the rhombohedral‐orthorhombic (R‐O) phase boundary, that is, x = 0, 0.1, 0.12, 0.14, and 0.16) were fabricated using the sol‐gel process by introducing a LaNiO₃ (LNO) seed layer. Structural and ferroelectric characterizations were used to investigate the effect of texturing on the Sm doping‐induced R‐O phase transition of the BiFeO₃ thin films. It was found that a phase transition occurred from the rhombohedral to the orthorhombic structure with increasing Sm content in the nontextured polycrystalline films, resulting in an R‐O phase boundary at x = 0.12. In contrast, the R‐O phase boundary in the textured films was more diffuse, indicating a two‐phase coexistence in a boarder range of Sm doping levels (x = 0.12‐0.16). This discrepancy was attributed to the complexity of the stress status in thin films. The dielectric and electrical properties of the nontextured and textured samples were investigated. The current study shows that the phase boundary in ferroelectric thin films can be altered by diverse means, thus providing insights into potential applications.

中文翻译：

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织构化对LaNiO3缓冲硅上溶胶-凝胶处理的Bi（Sm）FeO3薄膜相变的影响

铁电材料的取向调制是优化材料性能的合适方法。 使用溶胶-凝胶法通过以下方法制备带纹理的Bi _{1 x} Sm _x FeO ₃薄膜（菱形-斜方晶（R-O）相边界附近，即x = 0、0.1、0.12、0.14和0.16）。引入LaNiO ₃（LNO）种子层。利用结构和铁电特性研究了织构化对Bi掺杂的Bi掺杂的FeO _3的R-O相转变的影响薄膜。发现在非织构多晶膜中，从菱形到正交结构发生了相变，Sm含量增加，导致x  = 0.12处的R-O相界。相比之下， 织构薄膜中的R-O相边界更加分散，表明在Sm掺杂水平的边界范围内，x- 0.12-0.16处于两相共存。这种差异归因于薄膜应力状态的复杂性。研究了非织构和织构化样品的介电和电性能。当前的研究表明，铁电薄膜中的相界可以通过多种方式改变，从而为潜在的应用提供了见识。