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Comparative investigation of linear and nonlinear optical properties of As–70 at% Te thin films: influence of Ga content
Journal of Materials Science: Materials in Electronics ( IF 2.8 ) Pub Date : 2020-07-06 , DOI: 10.1007/s10854-020-03872-z
Alaa M. Abd-Elnaiem , R. M. Hassan , Hatem R. Alamri , Hasan S. Assaedi

Thin films (~ 150 nm) of amorphous As30Te70−xGax (where x = 0, 1, 3, 6, and 10 at%) are prepared through thermal evaporation of As30Te70−xGax bulk samples on glass substrates. X-ray powder diffraction (XRD) analysis reveals the amorphous nature of the as-prepared As30Te70−xGax thin films. The influence of Ga content on the As30Te70−xGax thin films’ linear and nonlinear optical properties is determined based on the optical reflectance and transmittance spectra. The estimated (direct or indirect) optical bandgap decreases with an increase in Ga content up to 3 at% and then increases, whereas the Urbach energy exhibits an opposite trend. The linear and nonlinear refractive indices, extension coefficient, optical conductivity, electrical conductivity and nonlinear susceptibility, optical density, inter-band transition strength, etc., are found to be significantly influenced by Ga content and the energy of incident waves. The As30Te67Ga3 composition can be considered as a puzzling compound as most of the investigated parameters in As30Te70−xGax alloys demonstrate opposite behaviors around that composition. Moreover, the optical surface resistance and thermal emission of As30Te70−xGax thin films are estimated from the investigated optical parameters and it was found that they are dependent on Ga content. The obtained results enhanced basic understanding and showed that the As–Te–Ga system qualifies for various optoelectronic applications.



中文翻译:

As–70 at%Te薄膜的线性和非线性光学性质的比较研究:Ga含量的影响

 通过热蒸发As 30 Te 70- x Ga x块状样品制备非晶As 30 Te 70- x Ga x(其中x = 0、1、3、6和10 at%)的薄膜(〜150 nm)在玻璃基板上。X射线粉末衍射(XRD)分析揭示了所制备的As 30 Te 70- x Ga x薄膜的非晶态性质。Ga含量对As 30 Te 70− x Ga x的影响薄膜的线性和非线性光学性质是根据​​光学反射率和透射光谱确定的。估计的(直接或间接)光学带隙随着Ga含量的增加而减小,直至3 at%,然后增加,而Urbach能量却呈现相反的趋势。发现线性和非线性折射率,延伸系数,光导率,电导率和非线性磁化率,光密度,带间跃迁强度等受Ga含量和入射波能量的显着影响。As 30 Te 67 Ga 3组成可以视为令人费解的化合物,因为As 30 Te 70- x中的大多数研究参数Ga x合金在该成分周围表现出相反的行为。此外,从研究的光学参数估计了As 30 Te 70- x Ga x薄膜的光学表面电阻和热发射,发现它们与Ga含量有关。所获得的结果增强了基本理解,并表明As-Te-Ga系统符合各种光电应用的条件。

更新日期:2020-07-06
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