The current–voltage (I–V) and capacitance–voltage (C–V) behaviors of the (Au/Ni)/HfAlO₃/n-Si (MIS) junctions at room temperature under white light with various intensities were investigated. The ln(I)–V curves show two linear behavior regions at about 1 V before and after the point of intersection that can be defined as two separate current-conduction (CMs) Mechanisms. The values of the ideality factor (n) and the zero-bias barrier height (Φ_B0) were extracted using the slope and intercept of the ln(I)–V curve before and after the intersection point based on lighting power. Although the Φ_B0 values decrease with increasing light power, n increases for two regions, and there is a strong linear relationship between them. The values of photo-current (I_ph) increase with the increasing lighting power due to the formation of electron–hole pairs. The slope of the double-logarithmic I_ph–P was changed from 0.422 to 0.852, respectively, at − 2 V and − 9 V, which indicates the ongoing distribution of N_ss. In addition, the profile of surface states (N_ss) ionized by light was obtained from the capacitance measured in dark and under lighting at 1 MHz. The N_ss–V curve has two characteristic peaks that correspond to the region of depletion and accumulation due to a special distribution of N_ss and their restructuring and reordering under the effects of lighting and an electric field.

的电流-电压（I-V ）和电容-电压（C-V ）的（金/镍）的行为/ HfAlO中₃在白光下使用各种强度室温/正硅（MIS）结进行了研究。ln（I）– V曲线显示了在相交点前后大约1 V处的两个线性行为区域，可以将其定义为两个独立的电流传导（CMs）机制。根据照明功率，使用相交之前和之后的ln（I）-V曲线的斜率和截距，提取理想因子（n）和零偏置势垒高度（_ΦB0）的值。虽然_ΦB0值随光功率的增加而减小，两个区域的n增大，并且它们之间存在很强的线性关系。由于电子-空穴对的形成，光电流（I _ph）的值随照明功率的增加而增加。双对数I _ph –P的斜率在− 2 V和− 9 V处分别从0.422变为0.852，这表明N _ss正在进行分布。另外，由光电离的表面状态（N _ss）的轮廓是从在黑暗中和在1 MHz下在光照下测得的电容获得的。所述Ñ _SS -V由于N _ss的特殊分布及其在光照和电场作用下的重构和重新排序，该曲线具有两个特征峰，分别对应于耗尽和累积区域。