High quality columnar β-Ga₂O₃ crystals were successfully grown via an edge-defined film-fed growth (EFG) method equipped with columnar Ir die. The effects of the pulling rate and die height on the structural quality and crystal shape of β-Ga₂O₃ are summarized and discussed in detail. The main problems of spiral and polycrystal formation and incomplete columnar quality in the β-Ga₂O₃ crystal growth were solved successfully. Suitable values for the growth parameters such as pulling rate and Ir height were determined to be in the range between 2–10 mm h⁻¹ and 30–40 mm (0.6–0.8 mm longer than the crucible height), respectively. Simultaneously, the die diameter should be 25 mm (0.5 mm wider than the crucible diameter) to obtain columnar β-Ga₂O₃ crystals in good quality. Furthermore, the crystalline quality of the as-grown crystal was confirmed via high-resolution X-ray diffraction (HRXRD) with a full-width at half-maximum (FWHM) of 69.3 arcsec. The defects of β-Ga₂O₃ were studied via a chemical etching method. Two types of etch pits were observed: (1) a triangle-shaped etch pit and (2) a quadrangle-shaped etch pit. The average defect density was estimated at a lower order of magnitude of −10⁴ cm⁻².

中文翻译：

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EFG法制备β-Ga2O3柱状晶体的技术改进及晶体质量优化研究

高品质的柱状的β-Ga _2个ö ₃晶体成功地生长通过边缘限定薄膜供料生长（EFG）配备有柱状的Ir模法。上的β-Ga的结构的质量和晶体形状提拉速度和模头高度的影响₂ ö ₃概括和详细讨论。在的β-Ga螺旋和多晶的形成和不完整的柱状质量的主要问题₂ ö ₃晶体生长被成功地解决。确定诸如拉速和Ir高度之类的生长参数的合适值在2-10 mm h ^-1之间和30–40毫米（比坩埚高度长0.6–0.8毫米）。同时，模头直径为25毫米（0.5毫米比坩埚直径宽），得到柱状的β-Ga _2个ö ₃在质量良好的晶体。此外，生长的晶体的晶体质量通过高分辨率X射线衍射（HRXRD）确认，半峰全宽（FWHM）为69.3 arcsec。的β-Ga的缺陷₂ ö ₃进行了研究通过化学蚀刻法。观察到两种类型的刻蚀坑：（1）三角形刻蚀坑和（2）四边形刻蚀坑。平均缺陷密度估计为-10 ⁴ cm的较低数量级⁻²。