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Spatial Atomic Layer Deposition of Aluminum Oxide as a Passivating Hole Contact for Silicon Solar Cells
Physica Status Solidi (A) - Applications and Materials Science ( IF 2 ) Pub Date : 2020-07-04 , DOI: 10.1002/pssa.202000348
Kortan Öğütman 1, 2, 3 , Nafis Iqbal 4, 5 , Geoffrey Gregory 4, 5 , Mengjie Li 4, 5 , Michael Haslinger 6 , Emanuele Cornagliotti 7 , Winston V. Schoenfeld 1, 2, 3, 4, 5 , Joachim John 8 , Kristopher O. Davis 2, 3, 4, 5
Affiliation  

Herein, tunneling aluminum oxide (Al2O3) passivation layers are demonstrated to be a candidate for hole collecting, passivating contacts when coupled with a boron‐doped surface. These very thin Al2O3 films (1.5–3 nm) are deposited using spatial atomic layer deposition (ALD) on boron diffused (110–115 Ω □−1) hydrophilic surfaces operating as metal–insulator–semiconductor (MIS) contacts. The emitter saturation current density values of ≈57 fA cm−2 are achieved for the Al2O3 film thicknesses of 2 nm before metallization. At this same thickness, the contact resistivity values of 33 mΩ cm2 are obtained after metallization. Most importantly, the boron diffusion, wet chemical surface preparation, and spatial ALD of Al2O3 used to create these MIS structures are all performed with industrially relevant equipment on Cz wafers.

中文翻译:

氧化铝作为钝化空穴接触用于硅太阳能电池的空间原子层沉积

在此,隧道氧化铝(Al 2 O 3)钝化层被证明是空穴收集的候选者,当与掺硼表面耦合时,钝化接触成为可能。这些极薄的Al 2 O 3膜(1.5–3 nm)是通过空间原子层沉积(ALD)在硼扩散的(110–115Ω□ -1)亲水表面上沉积的,该亲水表面用作金属-绝缘体-半导体(MIS)触点。在金属化之前,对于2 nm的Al 2 O 3膜厚度,可获得约57 fA cm -2的发射极饱和电流密度值。在相同的厚度下,接触电阻率值为33mΩcm 2在金属化之后获得。最重要的是,用于制造这些MIS结构的Al 2 O 3的硼扩散,化学湿法表面制备和空间ALD都是通过与工业相关的设备在Cz晶圆上完成的。
更新日期:2020-07-04
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