The effects of acceptor doping with manganese as either MnO₂ or MnNb₂O₆ (MnN) with CuO on the dielectric, ferroelectric, and piezoelectric properties of PIN‐PMN‐PT ceramics were investigated. The 2% MnNb₂O₆‐doped PIN‐PMN‐PT (6Pb(Mn_1/3Nb_2/3)O₃‐25Pb(In_1/2Nb_1/2)O₃‐34Pb(Mg_1/3Nb_2/3)O₃‐35PbTiO₃) ceramics possessed hard properties such as high coercive field (E_C) of 11.7 kV/cm, low dielectric loss (tan δ) of 0.7%, and high electromechanical quality factor (Q_M) of 1011. These properties were diminished in MnO₂‐doped ceramics because of lower oxygen vacancy defect concentration, and exaggerated grain growth resulted in >20 µm grain size. Co‐doping with 2 mol% MnNb₂O₆ and 0.5 mol% CuO retained hardened properties such as high E_C of 9.6 kV/cm, low tan δ of 0.6%, and high Q_M of 1029. MnNb₂O₆‐doped and MnNb₂O₆ + Cu co‐doped ceramics display excellent figures of merit for resonance and off‐resonance applications as well as high energy conversion efficiencies which make them promising candidates for high‐power transducer elements.

中文翻译：

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用于大功率传感器的Mn和Mn / Cu掺杂的PIN-PMN-PT压电陶瓷

研究了受主掺杂锰作为MnO ₂或MnNb ₂ O ₆（MnN）和CuO对PIN-PMN-PT陶瓷的介电，铁电和压电性能的影响。2％MnNb ₂ ö ₆掺杂PIN-PMN-PT（6PB（锰_1/3的Nb _2/3）O ₃ -25Pb（在_1/2的Nb _1/2）O ₃ -34Pb（MG _1/3 Nb的_2/3）O ₃ -35PbTiO ₃）陶瓷所具有硬特性，例如高的矫顽场（Ë _ç 11.7千伏/厘米），低介电损耗（tanδ δ）为0.7％）和1011的高机电品质因数（Q _M）。由于较低的氧空位缺陷浓度，这些特性在MnO ₂掺杂的陶瓷中有所减弱，并且过大的晶粒长大导致晶粒尺寸大于20 µm。共掺杂用2mol％MnNb ₂ ö ₆和0.5摩尔％的CuO保留硬化性能，例如高Ë _Ç 9.6千伏/厘米，低黄褐色δ的0.6％，和高的Q_中号的1029 MnNb ₂ ö ₆掺杂和MnNb ₂ O ₆ +铜共掺杂陶瓷在共振和非共振应用中表现出优异的品质因数，并且具有高能量转换效率，这使其成为大功率换能器元件的有希望的候选者。