Piezotronics and piezo-phototronics based on the third-generation semiconductor (such as ZnO, GaN, CdS, and monolayer chalcogenides) and two-dimensional materials, have attracted increasing attention due to the coupling characteristic of piezoelectric, photon excitation, and semiconductor properties. Strain can not only induce piezoelectric charges but also modulate bandgap of piezotronic materials. In this paper, we propose a structure of piezo-phototronic multijunction solar cell based on single-type two-dimensional piezoelectric semiconductor materials. By using the theory of detailed balance limit, the open circuit voltage and short circuit current of this piezo-phototronic multijunction solar cell are calculated. The results indicate that power conversion efficiency of the piezo-phototronic multijunction solar cell can theoretically reach to 33%, under the blackbody of temperature 6000 K, which is higher than the well-known theoretical Shockley-Queisser limit. This work provides guidance to design the next generation ultra-high performance piezo-phototronic solar cells.

基于第三代半导体（例如ZnO，GaN，CdS和单层硫族化物）和二维材料的压电和压电光电器件由于压电，光子激发和半导体特性的耦合特性而受到越来越多的关注。应变不仅可以感应压电电荷，而且可以调节压电材料的带隙。在本文中，我们提出了一种基于单型二维压电半导体材料的压电多结太阳能电池结构。根据详细的平衡极限理论，计算出了该压电多结太阳能电池的开路电压和短路电流。结果表明，在温度为6000 K的黑体下，压电-光电多结太阳能电池的功率转换效率理论上可以达到33％，高于众所周知的理论Shockley-Queisser极限。这项工作为设计下一代超高性能压电太阳能电池提供了指导。