This paper presents a novel threshold voltage model for triple material gate-all-around TFET based on its surface potential that also includes the device depletion regimes. Analytical expressions for surface potential are derived using 2D Poison’s equation and parabolic approximation method. Electric Field and threshold voltage of the device are derived by considering the surface potential of source channel depletion regime. Threshold voltage roll off is then obtained by subtraction between short channel TFET and long channel TFET. Drain-induced barrier lowering of the proposed device is achieved using threshold voltage values for two different drains to source voltage values. Threshold voltage lies in a range between 0.6 and 0.8 V for different doping concentrations as obtained from simulation, which is less in comparison with other available TFET devices. The validity of the device model is tested using TCAD ATLAS Simulation tool.

本文基于其三层材料的全能TFET的表面电势，提出了一个新颖的阈值电压模型，该模型还包括器件耗尽机制。表面电势的解析表达式是使用二维Poison方程和抛物线近似方法得出的。器件的电场和阈值电压是通过考虑源极沟道耗尽机制的表面电势得出的。然后，通过在短沟道TFET和长沟道TFET之间进行减法运算获得阈值电压滚降。使用两个不同的漏极至源极电压值的阈值电压值，可以实现所提出的器件的漏极诱导势垒降低。通过模拟获得的不同掺杂浓度的阈值电压在0.6至0.8 V之间，与其他可用的TFET器件相比，该数量要少。使用TCAD ATLAS Simulation工具测试设备模型的有效性。