Amorphous vanadium oxide (V x O y ) thin films were grown on SiO 2 glass substrates by pulsed laser deposition at RT in high vacuum of 1.0 × 10 −5 Pa. The electric conductivity of the film was increased from 0.34 S cm −1 at 323 K to 4.2 S cm −1 at 473 K, and the film showed positive Seebeck coefficient of15 μ V K −1 at 323 K and positive Hall voltage of10 μ V at RT, indicating p-type semiconductor. From ex situ X-ray photoelectron spectroscopy analysis, p-type amorphous V x O y thin films seemed to contain minor V 4+ ions with a V 4+ /V 5+ ratio of at least 0.2 at the surface.

中文翻译：

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脉冲激光沉积制备P型非晶氧化钒薄膜

通过在1.0×10 -5 Pa的高真空下在室温下通过脉冲激光沉积在SiO 2玻璃基板上生长非晶态氧化钒（V x O y）薄膜。该膜的电导率从0.34 S cm -1增加到0.34 S cm -1。在473 K下为323 K至4.2 S cm -1，并且该膜在323 K下显示出正的塞贝克系数为15μVK -1，在RT下显示出正的霍尔电压为10μV，表明是p型半导体。从异位X射线光电子能谱分析来看，p型非晶V x O y薄膜似乎在表面含有V 4+ / V 5+比至少为0.2的次要V 4+离子。