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Elimination of threading dislocations in α -Ga 2 O 3 by double-layered epitaxial lateral overgrowth
Applied Physics Express ( IF 2.3 ) Pub Date : 2020-07-02 , DOI: 10.35848/1882-0786/ab9fc5
Katsuaki Kawara 1, 2 , Yuichi Oshima 3 , Mitsuru Okigawa 1 , Takashi Shinohe 1
Affiliation  

We demonstrated double-layered epitaxial lateral overgrowth of α -Ga 2 O 3 by halide vapor phase epitaxy. The second ELO α -Ga 2 O 3 were regrown epitaxially and selectively through the windows of the patterned masks which were prepared on an ELO α -Ga 2 O 3 . The ELO islands coalesced step-by-step due to the nested-structure mask pattern. No threading dislocation was found by TEM not only above the masks but also above the windows of the second ELO pattern. The dislocation density was estimated to be less than 5 × 10 6 cm − 2 . We obtained a continuous crystalline α -Ga 2 O 3 with a low density of dislocations in the entire second-ELO surface.

中文翻译:

双层外延横向过度生长消除α-Ga 2 O 3中的螺纹位错

我们通过卤化物气相外延证明了α-Ga 2 O 3的双层外延横向过生长。通过在ELOα-Ga 2 O 3上制备的图案化掩模的窗口外延并选择性地使第二ELOα-Ga 2 O 3再生。由于嵌套结构的掩模图案,ELO群岛逐步合并。TEM不仅在掩模上方,而且在第二个ELO图案的窗口上方都没有发现螺纹错位。位错密度估计小于5×10 6 cm-2。我们获得了在整个第二ELO表面具有低位错密度的连续晶体α-Ga 2 O 3。
更新日期:2020-07-03
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