Investigations into integrated millimeter-wave (mmW) Class-F−1 power amplifier (PA) in stacked configuration have not been reported previously. This article presents a novel two-stage double-stacked heterojunction bipolar transistor (HBT) Class-F−1 PA in the 130-nm SiGe-BiCMOS technology. The proposed amplifier operates at the mmW center frequency of 38 GHz. The driving stage of the amplifier is loaded with a Class-F harmonic network and the double-stacked power stage incorporates Class-F−1 loading. An interstage matching network is designed to deliver maximum power transfer from the driving stage to the power stage. The proposed new HBT amplifier yields a saturated output power of 21.2 dBm along with an overall gain of 22.1 dB and a peak power-added efficiency (PAE) of 30.1%. A figure-of-merit (FoM) of 69.68 was achieved for this amplifier which is the highest so far when compared with various recently reported integrated mmW Class-F−1/F PAs.

中文翻译：

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采用 130 纳米 SiGe-BiCMOS 的 38 GHz 毫米波双堆叠 HBT F 类⁻¹ 高增益功率放大器

以前没有报道过对堆叠配置中集成毫米波 (mmW) F-1 类功率放大器 (PA) 的研究。本文介绍了一种采用 130 纳米 SiGe-BiCMOS 技术的新型两级双堆叠异质结双极晶体管 (HBT) F-1 类 PA。建议的放大器在 38 GHz 的 mmW 中心频率下运行。放大器的驱动级加载了 F 类谐波网络，双堆叠功率级包含 F-1 级加载。级间匹配网络旨在提供从驱动级到功率级的最大功率传输。建议的新型 HBT 放大器产生 21.2 dBm 的饱和输出功率以及 22.1 dB 的总增益和 30.1% 的峰值功率附加效率 (PAE)。品质因数 (FoM) 为 69。