当前位置: X-MOL 学术IEEE Trans. Microw. Theory Tech. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
A 150-GHz Transmitter With 12-dBm Peak Output Power Using 130-nm SiGe:C BiCMOS Process
IEEE Transactions on Microwave Theory and Techniques ( IF 4.3 ) Pub Date : 2020-07-01 , DOI: 10.1109/tmtt.2020.2989112
Peigen Zhou , Jixin Chen , Pinpin Yan , Jiayang Yu , Huanbo Li , Debin Hou , Hao Gao , Wei Hong

This article presents a compact 150-GHz transmitter with 12-dBm $P_{\mathrm{ sat}}$ and 17-dB conversion gain. This $D$ -band transmitter is composed of a frequency doubler, a micromixer, a two-stage $g_{m}$ -boosting power amplifier (PA), and an on-chip dielectric resonate (DR) antenna. At sub-terahertz, the output power and the gain are the limiting factors for the transmitter’s performance. In this work, $g_{m}$ -boosting topology is implemented to achieve the 17-dB gain by taking advantage of the base inductor without sacrificing the PA’s stability. The output power of the 150-GHz PA is enhanced by the proposed phase compensation method. In this proposed method, an auxiliary inductor is added for adjusting the phase difference to decrease the introduced loss from power combining and matching networks. The imbalance at the LO port is also reduced by the proposed capacitor and the resistor compensation method. From 140 to 160 GHz, the transmitter delivers more than 8-dBm output power, with the maximum $P_{\mathrm{ sat}}$ of 12 dBm at 148 GHz. This transmitter exhibits a conversion gain of 17 dB and an output 1-dB compression point ( ${\mathrm{ OP}}_{1~{\mathrm{ dB}}}$ ) of 11.4 dBm. The transmitter exhibits the highest output power, the highest ${\mathrm{ OP}}_{1~{\mathrm{ dB}}}$ , competitive conversion gain, and bandwidth among any silicon-based transmitters in $D$ -band, to the best of our knowledge.

中文翻译:

采用 130-nm SiGe:C BiCMOS 工艺、具有 12-dBm 峰值输出功率的 150-GHz 发射器

本文介绍了具有 12dBm 的紧凑型 150GHz 发射器 $P_{\mathrm{ sat}}$ 和 17-dB 转换增益。这 $D$ 波段发射机由倍频器、微混频器、两级 $g_{m}$ - 升压功率放大器 (PA) 和片上介质谐振 (DR) 天线。在亚太赫兹,输出功率和增益是发射器性能的限制因素。在这项工作中, $g_{m}$ -boosting 拓扑通过利用基极电感器实现 17-dB 增益而不牺牲 PA 的稳定性。150 GHz PA 的输出功率通过建议的相位补偿方法得到增强。在这个提出的方法中,添加了一个辅助电感来调整相位差,以减少功率合成和匹配网络引入的损耗。LO 端口的不平衡也可以通过建议的电容器和电阻器补偿方法来减少。从 140 到 160 GHz,发射器提供超过 8-dBm 的输出功率,最大 $P_{\mathrm{ sat}}$ 148 GHz 时为 12 dBm。该发射机的转换增益为 17 dB,输出压缩点为 1 dB ( ${\mathrm{ OP}}_{1~{\mathrm{ dB}}}$ ) 的 11.4 dBm。发射器表现出最高的输出功率,最高的 ${\mathrm{ OP}}_{1~{\mathrm{ dB}}}$ 、具有竞争力的转换增益和带宽在任何基于硅的发射器中 $D$ -乐队,据我们所知。
更新日期:2020-07-01
down
wechat
bug