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Nanowaveguide Designs in 220-nm SOI for Ultra-broadband FWM at Telecom Wavelengths
IEEE Journal of Quantum Electronics ( IF 2.5 ) Pub Date : 2020-10-01 , DOI: 10.1109/jqe.2020.3004863
Shivani Sharma , Vivek Kumar , Pravin Rawat , Joyee Ghosh , Vivek Venkataraman

We present optimal designs for nanowaveguides on standard 220-nm SOI platform yielding ultra-broadband phase-matching over bandwidths >500-nm spanning the entire telecommunication spectrum (O-, E-, S-, C-, L-, U- bands, ~1250-1750 nm) for degenerate-pump four-wave mixing (FWM). A complete study of FWM bandwidth as a function of waveguide dimensional parameters like width, etching depth and sidewall slant-angle is presented. Extensive numerical mode simulations show that the proposed device designs exhibit promising tolerances towards fabrication inaccuracies. These designs can be used for WDM (wavelength division multiplexing) systems in classical optical communication and/or broadband photon-pair sources for multi-channel quantum communication.

中文翻译:

用于电信波长超宽带 FWM 的 220-nm SOI 纳米波导设计

我们在标准 220-nm SOI 平台上提出了纳米波导的最佳设计,在跨越整个电信频谱(O-、E-、S-、C-、L-、U-波段)>500-nm 的带宽上产生超宽带相位匹配, ~1250-1750 nm) 用于简并泵四波混频 (FWM)。介绍了 FWM 带宽作为波导尺寸参数(如宽度、蚀刻深度和侧壁倾斜角)的函数的完整研究。广泛的数值模式模拟表明,所提出的设备设计对制造不准确表现出有希望的容差。这些设计可用于经典光通信中的 WDM(波分复用)​​系统和/或用于多通道量子通信的宽带光子对源。
更新日期:2020-10-01
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