Topological order of magnetic films shows promise due to its unconventional electromagnetic transport effects, but the discontinuity and the miniaturization of patterned magnetic films impose a limit on research of topological properties. In this article, a technique is proposed, the application of which improves the ease of electrical measurement in sub-micrometer-sized magnetic thin film elements. To obtain the topological Hall resistivity of the discretized magnetic textures, a ferromagnetic bilayer film was fabricated into specific geometries. Micromagnetic simulations are presented that demonstrate the topological spin distribution in an exchange coupled patterned ferromagnetic film. Experiments are performed on FePt/FeNi bilayered films that are formed with square arrays of FeNi disks on top of a continuous FePt film in a topological spin distribution. The observation of topological Hall effect was made in the FePt/FeNi film without a nanoscale Hall-bar device. The technique presented facilitates the electrical property measurement even in nanometer elements and offers a pathway for promoting spintronics applications.

中文翻译：

---

验证图案化铁磁薄膜的拓扑磁特性

磁性薄膜的拓扑顺序由于其非常规的电磁传输效应而显示出前景，但图案磁性薄膜的不连续性和小型化限制了拓扑性质的研究。在本文中，提出了一种技术，该技术的应用提高了亚微米尺寸磁性薄膜元件中电测量的便利性。为了获得离散化磁性结构的拓扑霍尔电阻率，将铁磁双层膜制造成特定的几何形状。提出了微磁模拟，展示了交换耦合图案化铁磁膜中的拓扑自旋分布。实验是在 FePt/FeNi 双层膜上进行的，该双层膜在拓扑自旋分布的连续 FePt 膜的顶部形成 FeNi 圆盘的方形阵列。拓扑霍尔效应的观察是在没有纳米级霍尔棒器件的 FePt/FeNi 薄膜中进行的。所提出的技术即使在纳米元件中也有助于电特性测量，并为促进自旋电子学应用提供了途径。