Metal-insulator-metal (MIM) diode is considered as a promising candidate for various high frequency applications owing to its tunneling dominant ultra-fast switching time. The zero bias operation of these diode rectifiers is very desirable for detection of low power RF signals. In the present work, an Au/Al₂O₃/Mo MIM diode integrated with coplanar waveguide (CPW) is fabricated and its rectification response is evaluated at zero bias i.e. without applying any external dc biasing across the diode. The complete device structure was patterned using the facile direct laser beam lithography technique forming the junction area of diode as small as 1 µm². The as fabricated diode exhibited maximum sensitivity of 9.4 A/W at zero volt leading to significant zero bias rectification performance. The direct rectification at 5 MHz and 10 MHz were obtained with rectification ratios of 2.33 and 1.57, respectively while at 7 GHz frequency with 0 dBm RF power, the maximum rectified dc current was measured as 7 µA. The zero bias RF to dc conversion efficiency of the device was estimated as 0.55%.

金属-绝缘体-金属（MIM）二极管由于其隧穿占主导地位的超快开关时间而被认为是各种高频应用的有前途的候选者。这些二极管整流器的零偏置操作对于检测低功率RF信号非常理想。在本工作中，制造了与共面波导（CPW）集成在一起的Au / Al ₂ O ₃ / Mo MIM二极管，并在零偏压下评估了其整流响应，即在二极管上不施加任何外部直流偏压。使用便捷的直接激光束光刻技术对整个器件结构进行构图，形成二极管的结面积小至1 µm ²。制成的二极管在零伏电压下的最大灵敏度为9.4 A / W，从而带来了显着的零偏置整流性能。在5 MHz和10 MHz的直接整流分别以2.33和1.57的整流比获得，而在7 GHz频率和0 dBm RF功率下，测得的最大整流直流电流为7 µA。器件的零偏置RF到DC转换效率估计为0.55％。