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Experimental investigation of influence of scratch features on GaAs cleavage plane during cleavage processing using a scratching capability index
International Journal of Precision Engineering and Manufacturing-Green Technology ( IF 4.2 ) Pub Date : 2020-07-03 , DOI: 10.1007/s40684-020-00241-3
Rui Gao , Chen Jiang , XiaoHu Lang , KangJia Dong , FuRong Li

High-power semiconductor laser cavities are formed via the cleavage plane, and critically influence the reliability and performance of the laser. This paper investigates both the scratching operation and the cleavage operation to improve the quality of the cleavage plane during the entire cleavage process. The scratching capability index (SCI) variable was proposed to evaluate the scratch quality of GaAs. A series of scratching and cleavage experiments were carried out to investigate the effect of the scratch features on the GaAs cleavage plane. Experimental results of the scratching operation showed that a smaller scratching load and higher scratching speed were beneficial for reducing the kerf width and damage area width of GaAs. The cleavage operation on GaAs {100} cleavage planes exhibited crack propagation in the [1̄01̄] and [1̄00] directions and a slip direction in the <110> crystal direction. The calculated SCI variable correlated well with the scratch and cleavage qualities of GaAs, where a higher scratching SCI correlated with a smoother GaAs cleavage plane during cleavage processing. Thus, the SCI has the potential to relate the scratching parameters with the resulting cleavage plane quality of GaAs, which will help improve the manufacturing of semiconductor laser chips in the future.



中文翻译:

利用划痕能力指数进行划痕加工过程中划痕特征对GaAs分裂平面影响的实验研究

大功率半导体激光器腔通过劈开面形成,并严重影响激光器的可靠性和性能。本文研究刮擦操作和解理操作,以在整个解理过程中提高解理平面的质量。提出了划痕能力指数(SCI)变量,以评估GaAs的划痕质量。进行了一系列划痕和切割实验,以研究划痕特征对GaAs切割平面的影响。划痕操作的实验结果表明,较小的划痕载荷和较高的划痕速度有利于减小GaAs的切口宽度和损伤区域宽度。在GaAs {100}解理面上的解理操作显示出在[1̄01̄]和[1̄00]方向上的裂纹扩展以及在<110>晶体方向上的滑动方向。计算得出的SCI变量与GaAs的划痕和劈裂质量具有很好的相关性,其中较高的划痕SCI与在劈裂过程中更光滑的GaAs劈裂平面相关。因此,SCI有可能将刮擦参数与GaAs的劈裂面质量相关联,这将有助于将来改善半导体激光芯片的制造。

更新日期:2020-07-03
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