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Improving Electrical Stability of a-InGaZnO Thin-Film Transistors with Thermally Deposited Self-Assembled Monolayers
Electronic Materials Letters ( IF 2.4 ) Pub Date : 2020-07-03 , DOI: 10.1007/s13391-020-00232-1
Mingyu Kim , Seong-Yong Cho , Youn-Seob Shin , Yeong-Cheol Seok , Hye-Won Kim , Ji-Yeon Yoon , Rino Choi , Jeong-Hwan Lee

Abstract

Amorphous InGaZnO (a-IGZO) TFTs become mainstream at the forefront of display backplanes and are actively expanding their area for next-generation optoelectronic devices such as flexible and transparent displays. For flexible displays, low temperature processed passivation technology is required to keep the reliability of the electrical properties in a-IGZO TFTs without damaging flexible plastic substrates. Here, we proposed a low-temperature passivation process using a dual-chamber system. A high-quality passivation layer composed of octadecyl-trichlorosilane was formed at 140 °C under vacuum on the back-channel of a-IGZO TFTs using the system. The thermally deposited self-assembled monolayers (SAMs) enable the formation of hydrophobic surfaces on a-IGZO TFTs, leading to the protection of the back-channel against water and oxygen efficiently. As a result, the electrical characteristics such as the threshold voltage shift, hysteresis, field-effect mobility, and negative bias stress of the SAM treated TFTs were significantly improved compared to those of the control TFTs.

Graphic Abstract



中文翻译:

通过热沉积自组装单层膜提高a-InGaZnO薄膜晶体管的电稳定性

摘要

非晶InGaZnO(a-IGZO)TFT成为显示器底板最前沿的主流,并正在积极扩大其面积,以用于下一代光电设备,例如柔性和透明显示器。对于柔性显示器,需要低温处理的钝化技术,以保持a-IGZO TFT的电性能的可靠性,同时又不损坏柔性塑料基板。在这里,我们提出了使用双室系统的低温钝化工艺。使用该系统,在140°C的真空下,在a-IGZO TFT的背沟道上,形成了由十八烷基三氯硅烷组成的高质量钝化层。热沉积的自组装单分子层(SAM)能够在a-IGZO TFT上形成疏水表面,从而有效地保护了背沟道免受水和氧气的侵害。

图形摘要

更新日期:2020-07-03
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